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  • 1995-1999  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry study on E2 peak splitting of Si–Ge short period superlattices (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7952-7955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report spectroscopic ellipsometry (SE) studies on (Si)2(Ge)12, (Si)6(Ge)2, and (Si)12(Ge)2 short period superlattices (SLs) whose optical response has not been reported yet. Multilayer calculations enabled us to determine the dielectric response of the superlattice layers. We report the clear observation of splitting of the E2 peak in (Si)m(Ge)n superlattices contrary to the previous SE report that the separation was observed only in larger period SLs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365369
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Ellipsometric studies of Cd1−xMgxTe (0≤x≤0.5) alloys (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 249-251 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The determination of the above band gap optical properties of zincblende Cd1−xMgxTe (0≤x≤0.5) ternary alloys are reported on. Using the parabolic-band critical point model, room-temperature critical point energies of the E0, E0+Δ0, E1, E1+Δ1, E2, and E0′ interband transitions from numerically calculated second energy derivatives of ellipsometric spectra were obtained. The presence of two distinct structures in the E2 feature for x〉0 was also observed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119511
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  • 3
    Electronic Resource
    Electronic Resource
    Monolayer epitaxy of GaAs at 650 °C by metal–organic chemical-vapor deposition with surface photoabsorption monitoring (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4209-4211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report monolayer-by-monolayer epitaxy of GaAs at 650 °C using surface photoabsorption (SPA) to monitor growth. Our results show, as confirmed by photoluminescence measurements, the possibility of growing highly accurate quantum well heterostructures by metal–organic chemical-vapor deposition at conventional growth temperatures. In addition, we observe a continuous increase of the SPA signal during trimethylgallium exposure that cannot be explained by present growth models. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116988
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  • 4
    Electronic Resource
    Electronic Resource
    Direct observation of electron emission site on boron-doped polycrystalline diamond thin films using an ultra-high-vacuum scanning tunneling microscope (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3219-3221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface morphology characteristics and electron emission properties of boron-doped polycrystalline diamond thin films grown by microwave plasma-assisted chemical-vapor deposition were investigated using an ultra-high-vacuum scanning tunneling microscope. Small secondary grains with average size less than 10 nm were observed to be on top of the isolated crystal surfaces. The current imaging tunneling spectroscopy (CITS) study revealed that high electron emission occurred at some crystalline facets while others showed relatively no measurable electron emission. The CITS study at high magnification also indicated that the electron emission was initiated at the grain boundaries rather than at the top of the grains. This observation suggests that the electrons transport through the grain-boundary conductive channels and preferentially emit at the low electron affinity facets. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125283
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  • 5
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometric characterization of undoped ZnTe films grown on GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 610-612 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report highly accurate dielectric function data for ZnTe. These data were made possible by the high quality of the heteroepitaxial material and the development of a chemical etching procedure for producing abrupt surfaces on ZnTe; they provided the first observation of the E0+Δ0 structure in ZnTe by spectroscopic ellipsometry and evidence for several contributions to the E2 structure. Accurate critical point energies were obtained by Fourier analysis. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118289
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  • 6
    Electronic Resource
    Electronic Resource
    Second-harmonic generation in poled films of nonlinear optical polymer composites (1995)
    Springer
    Optical and quantum electronics 27 (1995), S. 411-420 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The second-harmonic generation (SHG) has been measured for studying the molecular ordering and its relaxation process in poled states of two different nonlinear optical (NLO) polymer composites.p-Nitroaniline (pNA) and the azo dye Disperse Orange 3 (DO3) are uniformly dispersed in photopolymer matrices followed by poling. Two different composites made-up of 1 wt% of pNA and 2.5 wt% of DO3 are poled at 200 MV m-1 and 80 MV m-1, respectively. One of the second-order NLO coefficients,d 33, was found to be 0.27 pm V-1 for the pNA-doped film and 0.20 pm V-1 for the DO3-doped film. While for the latter the ratiod 33/d 33 (∼3.1) is consistent with the value of 3 in the low-field approximation, for the former the value of 3.5 indicates that higher-order effects of the poling field play a significant role in the NLO process. It is suggested that the SHG relaxation dynamics is also closely related to the UV absorption of the NLO molecules in a photopolymer matrix.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00563577
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