Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
77 (1995), S. 1705-1709
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubic/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3.36 eV and 3.15–3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted, donor-acceptor pair recombination respectively, on the basis of observed temperature and intensity dependences. A free exciton energy of 3.375 eV is deduced at 6.5 K. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358862
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