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  • 1
    Electronic Resource
    Electronic Resource
    Fine needle aspiration biopsy of the spleen in pyrexia of unknown origin (1999)
    Oxford, UK : Blackwell Science Ltd
    Cytopathology 10 (1999), S. 0 
    Details
    ISSN: 1365-2303
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: To evaluate the diagnostic utility, value and potential risk of fine needle aspiration biopsy of spleen (sFNAB) in patients with splenomegaly in pyrexia of unknown origin (PUO), a retrospective analysis of medical records and cytological material of 31 patients on whom FNAB was performed between April 1994 and October 1997 was done. The patients were HIV− and presented with PUO. All other relevant investigations were negative. The spleen was either palpable or detected to have space-occupying lesions on ultrasonography (USG). The splenic aspirates showed tuberculosis in 11 patients (35.4%) and inconclusive or reactive changes in nine patients (25.8%). One case out of this group proved to be Kaposi's sarcoma on autopsy. The other diseases encountered were leishmaniasis (n = 3), non-Hodgkin's lymphoma (n = 4), fungal infections (n = 2), Hodgkin's lymphoma (n = 1). The patients who were diagnosed as having tuberculosis had epithelioid cells, giant cells, necrosis and inflammatory cells in various combinations. AFB positivity was 63.6%. The other cases which showed granulomas but no AFB were diagnosed on empirical grounds and all responded to the anti-tuberculosis therapy. No complications were encountered with the procedure. Therefore the authors conclude that sFNAB is rewarding in patients where all other non-invasive modalities of diagnosis have failed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2303.1999.00170.x
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  • 2
    Electronic Resource
    Electronic Resource
    Immobilization of cadmium and zinc in soil by Al-montmorillonite and gravel sludge (1998)
    Oxford, UK : Blackwell Science Ltd
    European journal of soil science 49 (1998), S. 0 
    Details
    ISSN: 1365-2389
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: We investigated the potential of montmorillonite, Al-montmorillonite and gravel sludge to immobilize polluting heavy metals in agricultural soil. Batch experiments showed that both Al-montmorillonite and montmorillonite immobilized zinc and cadmium. Zinc was bound specifically on Al-montmorillonite and became increasingly incorporated into the interlayer hydroxy-Al polymer, whereas there was no specific sorption on montmorillonite. Cadmium was bound on montmorillonite and Al-montmorillonite unspecifically by cation exchange, but there was no incorporation into the lattice.In pot experiments montmorillonite, Al-montmorillonite, or gravel sludge were added to a soil contaminated with zinc and cadmium. Increasing doses of these agents decreased the concentrations of NaNO3-extractable zinc and cadmium. Aluminium-montmorillonite and gravel sludge were more efficient than montmorillonite in immobilizing both zinc and cadmium. Remobilization tests at pH between 4 and 5.5 showed that cadmium and zinc desorbed more easily from montmorillonite than from Al-montmorillonite. Gravel sludge application increased the buffer capacity of the contaminated soil substantially. The binding agents decreased zinc concentrations in red clover (Trifolium pratense), and gravel sludge also reduced the cadmium concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2389.1998.00140.x
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  • 3
    Electronic Resource
    Electronic Resource
    Deposition condition and thickness dependence on magnetic properties of sputtered NiFeCo thin films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5446-5448 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The soft magnetic properties of polycrystalline NiFeCo films have been investigated in the thickness range of 20–2400 A(ring). The films were deposited by dc magnetron sputtering, at 5 A(ring)/s, from a Ni66Fe16Co18 high purity target, and under an applied magnetic field of 85 Oe. The effects of deposition pressure on the film crystal structure and magnetic properties have been investigated via x-ray diffraction and magnetic measurements. Both easy and hard axis coercivity values decrease significantly as the deposition pressure was changed from 7 to 3 mTorr, with the corresponding effects observed in the magnetoresistance and anisotropy field values, respectively. The magnetic data at 3 mTorr showed a nonlinear behavior at thicknesses below 1000 A(ring), while at 7 mTorr the nonlinearity is present in both the low and high end thicknesses. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362333
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  • 4
    Electronic Resource
    Electronic Resource
    Cr(CoPtCr,CoPtx) layered film studies for hard bias applications : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5018-5020 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cr(backward-slash)(CoPtCr,CoPt) films were deposited on oxidized Si 〈100〉 substrates via dc magnetron sputtering. Process parameters, such as deposition rates, number of bilayers, and bias voltage, were varied to achieve the hard magnetic properties without thermal processing of the films. Coercivities in the range of 2000 Oe, with corresponding squareness of about 0.8–0.9, and remanent magnetization in the range (3–3.6) memu/cm3, were achieved by identification of the optimum conditions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362438
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  • 5
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance and high sensitivity in annealed NiFeCo/Ag multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5584-5586 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report giant magnetoresistance in annealed NiFeCo (2 nm)/Ag (3.3 nm) multilayers. For all samples, post-deposition annealing was necessary for the observation of GMR analogous to the NiFe/Ag discontinuous multilayer system. The GMR ratio and field sensitivity varied widely as a function of annealing from temperatures between 300 and 400 °C. A high MR ratio of 6.3% and field sensitivity of 11.3%/(kA/m) (0.9%/Oe) were observed for a seven bilayer sample annealed to 350 °C. In general, NiFeCo/Ag multilayers produced greater MR responses and field sensitivities than comparably annealed NiFe/Ag multilayers. NiFeCo/Ag multilayers, however, display more hysteresis than NiFe/Ag multilayers and lack a zero-crossing saturation magnetostriction versus annealing temperature. Multilayer deposition in a magnetic field severely degrades MR performance since it prevents the magnetostatic antiparallel alignment between magnetic grains which occurs in the absence of an applied magnetic field following sample annealing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362249
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  • 6
    Electronic Resource
    Electronic Resource
    Distribution of SiO2 precipitates in large, oxygen rich Czochralski-grown silicon single crystals after annealing at 750 °C (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 553-562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defects due to oxygen precipitation in Czochralski grown silicon single crystals annealed for 216 h at 750 °C and with oxygen concentration varying between 18 and 12×1017 atoms per cm3 (according to DIN 50438) were studied by means of small angle neutron scattering and γ-ray diffractometry probing the same volume elements in the sample. The size and the shape of the SiO2 precipitates were determined by means of small angle neutron scattering. In the center of the disk-shaped sample of 10 cm diameter one finds spherical precipitates with a radius of ≈20 A(ring), at the border the precipitates are of plate-like shape, ≈146×146×41 A(ring) in dimension. The k-space distribution of the diffuse scattering caused by the strain field of the SiO2 precipitates has been determined by means of a double-crystal diffractometer and 316 keV γ radiation. Modeling with Huang and Stokes–Wilson theory suggests that the relatively small SiO2 precipitates are loosely bound in larger clusters with a radius of ≈2000 A(ring) in which the crystal matrix is strongly distorted. With the γ-ray diffractometer operated in the single-crystal mode the thickness dependence of the integrated reflecting power was measured from which the static Debye–Waller factor for the 2 2 0 reflection is determined using statistical dynamical theory. The results confirm qualitatively the cluster model. In the center of the sample the size of the precipitates could be calculated by additional measurement of the static Debye–Waller factor of the 4 4 0 reflection. The result is in excellent agreement with the small angle neutron scattering data. Combining all the experimental data taken in the oxygen rich center of the annealed silicon crystal the average distance between the centers of the SiO2 precipitates in the clusters is ≈80 A(ring) and the distance between the large clusters is ≈40 000 A(ring). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359039
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  • 7
    Electronic Resource
    Electronic Resource
    Process optimization studies of high performance recordable minidiscs : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3842-3844 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, the effect of process parameters on magnetic and recording properties of MiniDiscs is reported. Processes have been tailored to optimize the recording performance of MiniDiscs, such as carrier-to-noise ratio (CNR) at low magnetic fields, recording power margin, and recording power threshold. At higher deposition pressures or lower deposition rates of TbFeCoCr, the external bias field sensitivity of the carrier becomes worse but the noise at high bias fields (〉200 Oe) decreases, resulting in improved CNR at high bias fields. Disks with TbFeCoCr sputtered at low pressure or high deposition rates produce a high error rate at high recording power (〉4.5 mW), due to jitter noise caused by interference of neighboring magnetic domains. The power margin of the disks is strongly affected by the pressure and deposition rate of TbFeCoCr. When the Curie temperature of the TbFeCoCr layer is lowered by 30 °C (alloy change), the power margin decreases significantly and CNR is decreased by ∼2 dB because of low Kerr rotation. CNR values well above 49.5 dB are easily achieved on MiniDiscs with optimized TbFeCoCr and SiN layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364726
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  • 8
    Electronic Resource
    Electronic Resource
    An instrument for automatic measurements of critical current of superconductors in pulse mode (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1486-1493 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An instrument has been developed for direct measurement of critical current and plotting of current–voltage (I–V) characteristics of superconductors in pulse mode. For these measurements, current pulses of increasing height are applied to sample and the voltage developed across the sample is monitored using a low noise voltage measuring circuit. Different sources of error responsible for limiting accuracy of pulse measurements techniques are discussed. A compensation network has been developed to reduce inductively induced voltages generated during pulse measurements, to negligible values. The instrument enables automatic critical current measurement with 1–10 μV/cm criteria in pulse mode without a computer and has voltage sensitivity of 10 nV. Critical current as a function of temperature/magnetic field and I–V characteristics of Bi-2212 single crystal and Y-123 thin films have been plotted using the circuit and the results have been compared with those obtained using direct current measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149611
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  • 9
    Electronic Resource
    Electronic Resource
    High exchange anisotropy and high blocking temperature in strongly textured NiFe(111)/FeMn(111) films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1766-1768 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strongly textured NiFe(111) underlayers, deposited by dc magnetron sputtering with applied substrate bias, are utilized to grow large, epitaxial grains of FeMn(111). These perfectly oriented (111) NiFe/FeMn bilayers exhibit the highest interfacial exchange anisotropy energy (0.17 erg/cm2), lowest coercivity (∼2 Oe) of the pinned layer, and highest blocking temperature (205 °C) ever reported, to the best of our knowledge. The relationship between the blocking temperature and the x-ray diffraction intensity of FeMn(111) indicates that the exchange interaction across the NiFe and FeMn interface is enhanced by the well-oriented, large, defect-free FeMn(111) crystals. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118650
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  • 10
    Electronic Resource
    Electronic Resource
    The effect of hydrogen on the network disorder in hydrogenated amorphous silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2803-2805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previous Raman scattering studies of the effect of hydrogen on the atomic network disorder in various hydrogenated amorphous silicon (a-Si:H) materials resulted in contradicting conclusions. We resolve these contradictions by showing that the surface and the bulk of a-Si:H films can behave differently due to their different hydrogen contents. In particular, we establish that hydrogen has a relatively moderate effect in improving the short-range order but a profound effect in improving the intermediate-range order of the atomic network. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125155
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