GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1995-1999  (3)
Document type
Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Spectrally and temporally resolved laser emission from vertical cavity surface emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 662-664 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The laser emission spectra of several vertical cavity surface emitting lasers, following pulsed laser excitation, have been measured with a temporal resolution of 〈1 ps. With broadband excitation, emission was observed from multiple longitudinal modes when pumped well above threshold. The output-pulse decay times of modes located near the edges of the high reflecting zone were significantly shorter than the decay times of modes located near zone center. The zone-edge modes were not observed when narrow-band photoexcitation was used, indicating that broadband excitation results in seeding of the laser cavity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114091
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Graded-composition buffer layers using digital AlGaAsSb alloys (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2320-2322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe step-graded digital-alloy buffers using alternate layers of Al0.5Ga0.5As and Al0.5Ga0.5As0.65Sb0.35 grown on GaAs substrates by molecular beam epitaxy. The buffers consist of three sets of superlattices with AlGaAs/AlGaAsSb layer thicknesses of 7.7/2.3 nm, 5.4/4.6 nm, and 3.1/6.9 nm, respectively, terminating in a lattice constant equal to that of bulk In0.32Ga0.68As. Transmission electron micrographs show that most of the misfit-generated dislocations lie near the steps in pseudoalloy composition, and atomic force micrographs indicate a rms surface roughness of 3.6 nm. A 20.5-period lattice-matched InGaAs/InAlAs reflector stack grown on such a buffer has a peak reflectivity of 98% near 1.3 μm. These buffers provide potentially useful substrates for optoelectronic device applications near 1.3 μm using strained InGaAs active regions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114331
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 329-331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface normal optoelectronic devices operating at long wavelengths ((approximately-greater-than)1.3 μm), require distributed Bragg reflectors (DBRs) with a practical number (≤50) of mirror layers. This requirement implies a large refractive index difference between the mirror layers, which is difficult to achieve in the traditionally used phosphide compounds. We demonstrate a highly reflective AlAsSb/GaAsSb DBR grown nominally lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.74 μm with maximum reflectivity exceeding 98%, which is well fitted by our theoretical predictions. Atomic force microscopy and transmission electron microscopy indicate reasonable crystal quality with some defects due to an unintentional lattice mismatch to the substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114202
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...