In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 44, No. 11 ( 1995), p. 1825-
Abstract:
Porous silicon (PS) samples with photoluminescence (PL) peak energies in the range of 1.4 to 2.0 eV were obtained by varing anodization conditions. 45 pieces of PS sample were stored in air for one year, and 102 pieces of PS sample were thermally oxidized at 200℃for 200 hours. After these two kinds of oxidation processes, PL peak energies of all PS samples focused to around 1.70-1.75eV. Supposing that luminescence centers with luminescence energies around 1.70-1.75eV exist in SiOx(x - 2) layers covering nanoscale silicon in fully oxidized PS, reported can be explained by the quantum confinement/luminescence centers model.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1995
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