In:
Applied Physics Letters, AIP Publishing, Vol. 70, No. 4 ( 1997-01-27), p. 490-492
Abstract:
Ferroelectric heterostructures of Au/Pb(Zr0.52Ti0.48)O3/SiO2/Si and Au/Pb(Zr0.52Ti0.48)O3/Si have been fabricated by using laser ablation technique. Electrical properties of these ferroelectric field-effect transistors have been characterized through both the current vs voltage and capacitance vs voltage (C–V) measurements. The C–V characteristics of Au/Pb(Zr0.52Ti0.48)O3/SiO2/Si heterostructures demonstrate a polarization switching behavior, showing a memory window as much as 1 V at 1 kHz. In addition, the experimental results reveal that a SiO2 buffer layer is essential for memory properties in the Au/Pb(Zr0.52Ti0.48)O3/SiO2/Si gate structure.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1997
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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