In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 46, No. 5 ( 1997), p. 959-
Abstract:
The infrared photoluminescence spectroscopy was performed for Sb-doped Hg1-xCdxTe(x≈0.38)from 3.9K to 115K. The band to band transition,localized exciton and donor acceptor pair(D0A0)related luminescence peaks were observed. The acceptor level which is related to Sb-doping and about 30 meV above the valence band was observed in photoluminescence experiment in Hg1-xCdxTe(x≈0.38).
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1997
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