In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12R ( 1997-12-01), p. 7302-
Abstract:
We investigated the diffusion barrier properties of Cu 10 Zr 7 intermetallic compound film for possible application to Cu metallization technology. First, a Cu/Zr bilayered film was heat-treated in vacuum at various temperatures for 1h, to confirm the most stable Cu–Zr compound formed by solid-phase reaction. It was found that a single phase of Cu 10 Zr 7 compound can be obtained at temperatures above 550°C and that this compound film is stable up to 600°C. On the other hand, by the co-sputtering method, although CuZr 2 –Cu 10 Zr 7 mixture alloy film was prepared, no Cu 10 Zr 7 single-phase compound film was obtained. We heat-treated the Cu/CuZr 2 –Cu 10 Zr 7 bilayered film for 2h at 500°C, which was lower than the temperature necessary for the formation of Cu 10 Zr 7 by solid-phase reaction. In this way, we prepared the stoichiometric Cu 10 Zr 7 film. Then, we produced the Cu/Cu 10 Zr 7 /ZrN/Si contact system using this Cu 10 Zr 7 film as a diffusion barrier and investigated its thermal stability. We found that the system is satisfactorily stable up to 650°C without any Si diffusion, although a slight diffusion of Cu was observed at the interface of Cu/Cu 10 Zr 7 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.7302
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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