In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 9S ( 1995-09-01), p. 5113-
Abstract:
C -axis-oriented LiNbO 3 thin films were prepared on Pt(111)/ SiO 2 /Si substrates by rf magnetron sputtering. The LiNbO 3 films grown showed pyroelectricity and piezoelectricity. The pyroelectric coefficient of the film was 71×10 -6 C/(m 2 K) , which was 86% of the value of a LiNbO 3 bulk crystal. The surface acoustic wave (SAW) velocity measured was 3980m/s. In order to control the polarization, bias sputtering was applied. When bias voltage was applied to the substrates during film growth, polarization reversal was observed. From these experimental results, it was found that bias sputtering effectively controls the polarization of LiNbO 3 films.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.5113
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink