In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 7R ( 1998-07-01), p. 4144-
Abstract:
Pt bottom electrodes for SrBi 2 Ta 2 O 9 (SBTO) capacitors have been investigated for use in
nonvolatile memories. A Pt thin film which is sputtered at a temperature of 300°C consists of enlarged columnar grains, while a film sputtered at room temperature consists of fibrous columnar
grains. The formation mechanism of enlarged grains of the Pt film sputtered at 300°C is due to the fact that the film structure changes with substrate temperature based on the structure-zone model.
The Pt bottom electrode which consists of the enlarged grains results in a decrease in the Ti diffusion path, leading to effective adhesion of Pt to a SiO 2 film.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.4144
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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