In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 4 ( 1995-07-01), p. 1906-1909
Abstract:
For the next generation of semiconductor devices, new metal deposition technologies (such as Cu and Ti chemical vapor deposition) are being developed. As very large-scale integrated fabrication becomes more highly integrated, the size of contact/via holes must shrink, producing higher aspect ratios. These geometries create major difficulties in obtaining acceptable step coverage of the barrier/glue layer within the contact/via holes. A new technology has been developed, called long-throw sputter (LTS), for achieving acceptable step coverage particularly for geometries below 0.5 μm without employing collimators in the system. LTS (patent pending) provides more than 40% bottom coverage of barrier metal films in 0.35 μm contact holes with 3.0 aspect ratio while maintaining a high deposition rate and acceptable film uniformity. Additionally, LTS may facilitate Al alloy flow and/or reflow application.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1995
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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