In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 493 ( 1997)
Abstract:
A series of sol-gel derived PB(Zn 1/3 Nb 2/3 )O 3 -PbTiO 3 (PZN-PT) films, with various PbTiO 3 contents, have been prepared on platinized Si wafers. The (l-x)PZN - xPT films fired to 700C became single phase perovskite for x 〉 0.7. In the PZN-0.1PT films, the films still contain pyrochlore phase at a firing temperature of 850C; the perovskite phase appeared at a firing temperature of 800C. The dielectric constant increased with increasing PT content, with a peak in dielectric constant at x = 0.8. PZN-PT films with x = 0.8 exhibited dielectric constant, dissipation factor, remanent polarization and coercive field values of 600, 0.10, 6 and 45 kV/cm respectively.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-493-445
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1997
Permalink