In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 3 ( 1998-05-01), p. 1239-1243
Abstract:
ZnGa 2 O 4 and doped ZnGa2O4 thin film phosphors were prepared by the rf magnetron sputtering method. Deposition parameters were controlled to characterize the deposition mechanism and structural changes. And then the relation between the structure and luminous properties was characterized. To observe the effects of the substrates, thin films were deposited on Si(100), Si(111), and indium–tin–oxide (ITO) coated glass substrates. The orientational transition was observed by varying the substrate temperature. The grain size of ZnGa2O4:Mn thin film deposited on a Si wafer was smaller than that on an ITO/glass substrate, which resulted in higher photoluminescence (PL) intensity. By heat treatment, PL intensity was increased because it eliminated the defects in films and improved the crystallinity.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1998
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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