In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 4R ( 1996-04-01), p. 2052-
Abstract:
Al-induced crystallization of an amorphous Si (a-Si) thin film in a polycrystalline Al/native SiO 2 /a-Si structure has been investigated on an atomic level using cross-sectional high-resolution transmission electron microscopy. A 7-nm polycrystalline Al layer was thermally deposited onto a 50-nm a-Si thin film, deposited by low-pressure chemical vapor deposition and covered with a 2.2-nm layer of native SiO 2 . The a-Si thin film in this structure was partially crystallized at 250°Cand completely crystallized at 500°C after 30 min. Lattice fringes of Si(111) were observed in the original Al layer and interfacial native SiO 2 layer after the annealing process. From the above results, it was concluded that Al-induced crystallization of the a-Si thin film occurred by interdiffusion of Al and Si atoms through the native oxide layer even though the 2.2-nm native SiO 2 layer was not removed completely at the Al/a-Si interface. A possible model, that can be used to explain the Al-induced crystallization phenomena by taking into account the changes that take place within or near the native SiO 2 layer during the annealing process, was proposed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.2052
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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