In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 47, No. 3 ( 1998), p. 461-
Abstract:
By using in-situ reflection high energy electron diffraction, the epitaxial growth of Co films on GaAs(001) surface is studied. When the growth temperature was 150℃, the growth process of Co films can be divided into three stages. The crystal structure of the first 3nm of the Co film is body-center-cubic(bcc) metastable phase. Then the next 4nm film is a complicated polycrystalline phase. After the thickness exceeds 7nm, the Co film is a single-crystalline hexagonal-close-packed(hcp) stable phase. This new result clears up the controversy in former experiments about the structure of the Co epilayer, and establishes, for the first time to our knowledge, a clear physical picture of the epitaxial growth of Co films on GaAs(001).
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1998
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