In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 13, No. 12 ( 1998-12), p. 3436-3441
Abstract:
Well-crystallized Pb(Zr 0.52 Ti 0.48 )O 3 thin films (4000 Å thickness) can be synthesized on Pt/Ti/SiO 2 /Si(100) substrate at a temperature as low as 520 °C. The polycrystalline lead zirconate titanate (PZT) perovskite phase formation was confirmed with x-ray diffraction (XRD) analysis, and growth morphologies were studied with a scanning electron microscope (SEM). The electrical properties of PZT thin films were characterized through P-E hysteresis curve, dielectric constant, and loss, fatigue, and leakage current measurements. Remanent polarization ( P r ) and coercive field ( Ec ) of as-grown film were 8–30 μC/cm 2 and 24–64 kV/cm with the variation of applied voltage (5–15 V). The post-annealing enhances the electrical properties even at 500 °C, which is below the as-grown temperatures (520 °C). The average polarization loss after applying rectangular pulse ( V p - p = 10 V) up to 10 11 cycles was 40.9% for a 300 μm small dot and 22% for a 500 μm large dot, which are relatively improved values for platinum electrode. The values of dielectric constant (ε′) and tan δ measured with small signal sign wave (1 V, 10 kHz) were 1207 and 0.066 in the case of as-grown film.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.1998.0467
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1998
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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