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  • 1995-1999  (3)
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  • 1995-1999  (3)
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  • 1
    Online Resource
    Online Resource
    Effect of fluorine on the diffusion of boron in ion implanted Si
    AIP Publishing ; 1998
    In:  Applied Physics Letters Vol. 73, No. 9 ( 1998-08-31), p. 1263-1265
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 73, No. 9 ( 1998-08-31), p. 1263-1265
    Abstract: Ion implants of 1 keV B+11 and 5 keV BF2+, to a dose of 1×1015/cm2 at a tilt angle of 0°, were implanted into preamorphized (Si+,70 keV, 1×1015/cm2) wafers. These samples were rapid thermal annealed in an ambient of 33 ppm of oxygen in N2 at very short times ( & lt;0.1 s spike anneals) at 1000 and 1050 °C to investigate the effects of the fluorine in BF2 implants on transient enhanced diffusion (TED). By using a relatively deep preamorphization of 1450 Å, any difference in damage between the typically amorphizing BF2 implants and the nonamorphizing B implants is eliminated because the entire profile ( & lt;800 Å after annealing) is well contained within the amorphous layer. Upon annealing, the backflow of interstitials from the end-of-range damage from the preamorphization implant produces TED of the B in the regrown layer. This allows the chemical effect of the fluorine on the TED of the B in the regrown Si to be studied independent of the damage. The secondary ion mass spectroscopy results show that upon annealing, the presence of fluorine reduces the amount of B diffusion by 30% for the 1000 °C spike anneal, and by 44% for the 1050 °C spike anneal. This clearly illustrates there is a dramatic effect of F on TED of B independent of the effects of implant damage. Analysis of the temperature dependence of the enhancement factors point to transient enhanced diffusion not boridation as the source of the interstitials.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.122146
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Study of electrical measurement techniques for ultra-shallow dopant profiling
    American Vacuum Society ; 1996
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 14, No. 1 ( 1996-01-01), p. 397-403
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 14, No. 1 ( 1996-01-01), p. 397-403
    Abstract: The evaluation of the doping process requires the ability to measure accurate depth profiles. In this study, the accuracy of electrical measurement techniques is evaluated for the measurement of ultra-shallow dopant profiles. The methods investigated are spreading resistance profiling, electrochemical capacitance–voltage profiling, differential Hall effect profiling, tapered-groove profilometry, and a new method called microwave surface impedance profiling. The focus of this article is the comparative study of the different methods and an evaluation of the accuracy of the profiles. The study points out details of the measurements and analysis which are important in obtaining consistent and accurate measurements of ultra-shallow junctions.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.588482
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1996
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 3
    Online Resource
    Online Resource
    Shallow junction doping technologies for ULSI
    Elsevier BV ; 1998
    In:  Materials Science and Engineering: R: Reports Vol. 24, No. 1-2 ( 1998-10), p. 1-80
    Details
    In: Materials Science and Engineering: R: Reports, Elsevier BV, Vol. 24, No. 1-2 ( 1998-10), p. 1-80
    Type of Medium: Online Resource
    ISSN: 0927-796X
    URL: Article
    DOI: 10.1016/S0927-796X(98)00013-8
    Language: English
    Publisher: Elsevier BV
    Publication Date: 1998
    detail.hit.zdb_id: 2012178-7
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