In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 10A ( 1999-10-01), p. L1099-
Abstract:
The p-channel metal oxide semiconductor field effect transistors (MOSFETs) with P + polycrystalline silicon-germanium (poly-Si 1- x Ge x ) gates have been successfully fabricated. The poly-Si 1- x Ge x gates were grown by ultra-high vacuum chemical vapor deposition (UHVCVD) system using Si 2 H 6 and GeH 4 gases. The deposition rate of poly-Si 1- x Ge x increases with increasing GeH 4 flow rate at small flow rate, and then decreases with increasing GeH 4 flow rate. This result was explained by the competition of two growth mechanisms on poly-Si 1- x Ge x surface. The gate oxide layer capped with a thin nitride layer was used to prevent the damage of gate oxide from UHVCVD deposition process. The fabricated MOSFETs exhibit well-behaved characteristics.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L1099
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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