In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 776-
Abstract:
A low resistance and thermally stable TiSi 2 self aligned silicide (SALICIDE) for deep submicron p + and n + dual gate complementary metal-oxide semiconductors (CMOS) has been developed. This was achieved through the use of a novel oxygen free silicidation (OFS) process using a reaction between a titanium included nitrogen ( Ti x N y ) and an oxygen free poly-Si-gate. The oxygen free poly-Si was realized using low pressure chemical vapor deposition (LPCVD) system with nitrogen flow Load-Lock chamber. The OFS TiSi 2 film did not agglomerate after the treatment of the RTA at 1050° C for 20 s in a N 2 atmosphere and the additional furnace annealing at 900° C for 30 min. in a N 2 atmosphere. For both n + and p + gates, low sheet resistances (about 2.8 Ω /square.) were achieved under the 0.2 µ m size.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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