In:
Journal of Applied Physics, AIP Publishing, Vol. 86, No. 8 ( 1999-10-15), p. 4467-4472
Abstract:
The integrated ferroelectric/semiconductor systems, Pb(Zr0.53Ti0.47)O3 (PZT)/SiO2/Si have been prepared and investigated. It was found that an asymmetry related to the conduction type of the substrate (Si) and the polarization direction of PZT exists in the polarization–voltage loops of the integrated system. According to the configuration and the characteristic of the integrated structure, we suggest that the space charge layer in Si and the tunneling process between Si and PZT during the polarization are the main causes for this asymmetry.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1999
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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