In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 1A ( 1995-01-01), p. L85-
Abstract:
A new fabrication technology has been used for field-emission triodes with the emitter-gate separation as small as 0.18 µ m to reduce the turn-on and anode voltages. The technology is based on the thermal oxidation of silicon and low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon, making the fabrication of a sub-half-micronmeter gate opening easy and reproducible. The entire process requires use of only one photolithography mask, and does not require advanced high-resolution photolithographic techniques. In this device, the oxidation process serves the three purposes of sharpening the emitters, defining the emitter-gate separation, and achieving a high-quality insulator. The finished devices have the emitter situated exactly at the center of the gate opening due to a self-alignment process. Furthermore, the LPCVD polysilicon film can form gate electrodes with a smooth edge and a small gate opening due to excellent step coverage.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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