In:
Applied Physics Letters, AIP Publishing, Vol. 71, No. 9 ( 1997-09-01), p. 1237-1239
Abstract:
A short H2 plasma treatment of the gate SiNx before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiNx precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H2 plasma damage which eventually generated a rough a-Si:H/SiNx interface.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1997
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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