In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 420 ( 1996)
Abstract:
Multi-trapping transient currents through pure exponential band tails are calculated by Monte Carlo simulations of unprecedented accuracy. The time and energy dependent carrier distributions, the current and the charge signals are obtained. The transit time t T and the dispersion parameters α 1 , and α 2 , before and after the transit time, are extracted from the simulated currents. Results are presented for the expected temperature dependence of α 1 and α 2 and of the drift mobility μ D for electrons and holes in a-Si:H. At low temperature, α 1 = α 2 = T/T o is found, but above T ≈ 0.6 T o , α 1 , bends downwards to saturate at 1 at high temperature while α 2 bends upwards, clearly improving the agreement with the experimental data. The temperature dependence of the drift mobility μ D is well reproduced for holes with a microscopic mobility of μ o = 0.5 cm 2 V −1 s −1 . For electrons, the agreement is also excellent but the surprisingly low value of μ o = 4 cm 2 V −1 s −1 is found.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-420-759
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1996
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