In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 2A ( 1998-02-01), p. L122-
Abstract:
Oxidation of Si 1- x Ge x films has been carried out by direct photo chemical vapor deposition (direct photo-CVD) directly with activated O 2 induced by Vacuum-Ultra-Violet (VUV) light radiation. The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si 1- x Ge x interface is observed after VUV-induced Si 1- x Ge x oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO 2 and GeO 2 is formed. This might be the reason that Ge pileup effect is eliminated in this study.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.L122
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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