In:
Applied Physics Letters, AIP Publishing, Vol. 66, No. 24 ( 1995-06-12), p. 3319-3321
Abstract:
Current driven instabilities in the collector of III–V heterojunction bipolar transistors (HBT) are investigated. Numerical simulations indicate that in a modified AlGaAs/GaAs HBT the collector current shows oscillatory behavior due to the transferred-electron (Gunn–Hilsum) effect. Influence of the Kirk effect as well as conditions for oscillation are discussed.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1995
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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