In:
Advanced Electronic Materials, Wiley, Vol. 4, No. 6 ( 2018-06)
Abstract:
Although high‐quality graphene can be produced on catalyst metals, their practical applications, especially Si technologies, are limited by the high‐temperature growth and the posttransfer process. A high‐performance system composed of W/nanocrystalline graphene (nc‐G)/TiN is realized for the long‐term downscaling of interconnect technology. The nc‐G is directly grown on noncatalytic TiN, up to 300 mm in diameter, at a low temperature of ≈560 °C, which is below the complementary metal‐oxide semiconductor integration temperature. The versatile roles of nc‐G in the interconnect are demonstrated: as a promoter of the preferential grain growth of the W layer, as a diffusion barrier to metal‐silicide formation, and as a proper adhesion layer with adjacent layers. Overall, a significant reduction (27%) in the resistance of the interconnect is achieved by the insertion of nc‐G between W and TiN. This work points to the possibility of practical graphene applications via direct nc‐G growth that is compatible with current Si technology.
Type of Medium:
Online Resource
ISSN:
2199-160X
,
2199-160X
DOI:
10.1002/aelm.201700624
Language:
English
Publisher:
Wiley
Publication Date:
2018
detail.hit.zdb_id:
2810904-1
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