In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 6 ( 1998-11-01), p. 2934-2937
Abstract:
c- SiO 2 samples were implanted with Ag+ at an energy of 200 keV to doses in the range of 2.3–9×1016 ions/cm2 at room temperature. At a dose of 6.7×1016 ions/cm2, the transmission electron microscopy image shows that the implanted layer consists of two major sizes of nanoclusters: the large clusters, found in the deeper layer, are about 20 nm in diameter; the smaller clusters, found near the surface, are about 5 nm in diameter. At the relatively low dose of 2.3×1016 ions/cm2, there is only one optical absorption band caused by surface plasmon resonance. At a higher dose, a splitting of the absorption band and the redshift are attributed to a dipole interaction between nanoclusters for a high density of nanoclusters.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1998
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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