In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 11B ( 1996-11-01), p. L1518-
Abstract:
Highly c -axis oriented AlN films were fabricated on various substrates by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) at a substrate temperature of 500°C. The degree of c -axis orientation depends sensitively on the substrate: the standard deviations σ of AlN(0002) rocking curve peaks are 4.9°, 4.8°, 4.3°, 4.0° and 1.5° on SiO 2 , Si 3 N 4 , Si(100), Si(111) and α-Al 2 O 3 (0001) substrates, respectively. The amorphous interfacial silicon oxide layer on Si substrate has an important effect on the degree of c -axis orientation and in-plane alignment of the AlN film. The AlN films prepared by ECR PECVD have much lower surface roughness ( R RMS =1.1–1.9 nm) than the sputter-deposited films ( R RMS =3.0–9.0 nm), which offers lower propagation loss in SAW devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L1518
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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