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  • 1
    Online Resource
    Online Resource
    Hydrogen and Oxygen Plasma Effects on Polycrystalline Silicon Thin Films of Various Thicknesses
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 6R ( 1997-06-01), p. 3389-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 6R ( 1997-06-01), p. 3389-
    Abstract: This work studied the hydrogen and oxygen plasma effects on the resistivity, effective free carrier concentration, and mobility of As + - and BF 2 + -doped polycrystalline silicon (polysilicon) thin films of various thicknesses. It was found that the resistivity of a polysilicon thin film increased with the decrease of the thickness of the film. This was mainly due to the decrease of effective carrier concentration and the mobility through the decrease of the grain size since the thickness limited regrowth of the film. The hydrogen and/or oxygen plasma treatment decreased the effective carrier concentration of the film through the neutralization of boron and arsenic ions. This effect was more evident for the thinner ( 〈 60 nm) film. The plasma treatment also decreased the mobility of the film, unless the thickness of the film was thinner than 50 nm, for which, the mobility instead increased since the plasma passivation effect became dominant.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.36.3389
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 2
    Online Resource
    Online Resource
    The Characteristics of Polysilicon Oxide Grown on Amorphous Silicon Deposited from Disilane
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 8R ( 1997-08-01), p. 5040-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 8R ( 1997-08-01), p. 5040-
    Abstract: The characteristics of polysilicon oxide (polyoxide) grown on amorphous silicon deposited from disilane as the silicon source are reported on. The rate of amorphous silicon deposition from disilane is comparable to that of polysilicon deposition from silane. Moreover, the obtained polyoxide has the desirable electrical characteristics of lower leakage current and higher breakdown field than those of polyoxide grown on polysilicon deposition from silane, urgently needed for nonvolatile memory application. At the same time, the grown polysilicon oxides have lower electron trapping rates and larger charge-to-breakdown ( Q bd ), both attributable to their smoother polyoxide/polysilicon-1 interface than those of polyoxides grown on polysilicon deposition from silane.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.36.5040
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 3
    Online Resource
    Online Resource
    Suppression of Boron Penetration in BF 2 + -Implanted Poly-Si Gate
    IOP Publishing ; 1996
    In:  Japanese Journal of Applied Physics Vol. 35, No. 12R ( 1996-12-01), p. 6003-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12R ( 1996-12-01), p. 6003-
    Abstract: In this paper, a comprehensive study of gate engineering to suppress the penetration of boron in p-type metal-oxide-semiconductor field-effect transistor (MOSFET) with the p + -poly-Si-gate is reported. Four types of poly-Si gate structure, two types of gate dielectrics were investigated to suppress the boron penetration. Among the different gate structures, the stacked amorphous silicon structure was found to be the most effective way to retard the boron penetration. N 2 O oxide exhibited a better retarding of the boron diffusion as compared with the O 2 oxide. It was found that a combination of stacked amorphous silicon with N 2 O oxide is the most effective way to suppress the boron penetration. Thermal stability, oxide integrity, and D it of this sample are superior to all the other samples.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.35.6003
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 4
    Online Resource
    Online Resource
    Pulsed anodic etching: An effective method of preparing light-emitting porous silicon
    AIP Publishing ; 1996
    In:  Applied Physics Letters Vol. 68, No. 17 ( 1996-04-22), p. 2323-2325
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 68, No. 17 ( 1996-04-22), p. 2323-2325
    Abstract: A pulsed anodic etching method is developed to prepare light-emitting porous silicon. Under the same equivalent etching condition, pulsed etching can yield a more uniform porous silicon film with stronger photoluminescence intensity than the film prepared by ordinary dc etching. The atomic force microscopic observation shows that the porous silicon surface prepared by pulsed etching contains more widely separated Si columns but with steeper sidewalls, which are believed to result in the improvement of quantum confinement. The thickness of pulse etched porous silicon film is found to be much larger than that of a dc etched sample.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.115845
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    Doping and photoelectric properties of C 60 films prepared by ionized cluster beam deposition
    Springer Science and Business Media LLC ; 1998
    In:  Applied Physics A: Materials Science & Processing Vol. 67, No. 4 ( 1998-10-1), p. 441-445
    Details
    In: Applied Physics A: Materials Science & Processing, Springer Science and Business Media LLC, Vol. 67, No. 4 ( 1998-10-1), p. 441-445
    Type of Medium: Online Resource
    ISSN: 0947-8396 , 1432-0630
    URL: Article
    DOI: 10.1007/s003390050801
    RVK:
    UA 9001.A
    Language: Unknown
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1998
    detail.hit.zdb_id: 1398311-8
    detail.hit.zdb_id: 184232-8
    detail.hit.zdb_id: 283365-7
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  • 6
    Online Resource
    Online Resource
    Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 7R ( 1997-07-01), p. 4278-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 7R ( 1997-07-01), p. 4278-
    Abstract: A high performance top-gate thin film transistor (TFT) has been fabricated using an as-deposited polycrystalline silicon (poly-Si) film by ultrahigh-vacuum chemical vapor deposition (UHV/CVD) followed by chemical mechanical polishing (CMP). In this process, due to the ultraclean environment and very low-pressure deposition of UHV/CVD, high-quality poly-Si films can be obtained and no long-term or post-recrystallization in channel films is needed. Maximum field effect mobilities of 58 cm 2 /V·s and 98 cm 2 /V·s for p- and n-channel TFTs, respectively, an ON/OFF current ratio of 1.1×10 7 for both p- and n-channels, and threshold voltages of -0.54 V for p-channel and 0.36 V for n-channel devices, respectively, are achieved. Finally, an analytical model of poly-Si TFTs was used to simulate the gate-voltage-dependent activation energy on the threshold and above the threshold regions and showed good agreement.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.36.4278
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 7
    Online Resource
    Online Resource
    Interpretations of atomic-resolution images in atomic-force microscopy
    American Physical Society (APS) ; 1995
    In:  Physical Review B Vol. 51, No. 15 ( 1995-4-15), p. 10013-10016
    Details
    In: Physical Review B, American Physical Society (APS), Vol. 51, No. 15 ( 1995-4-15), p. 10013-10016
    Type of Medium: Online Resource
    ISSN: 0163-1829 , 1095-3795
    URL: Article
    DOI: 10.1103/PhysRevB.51.10013
    RVK:
    UA 6500.3.B
    Language: English
    Publisher: American Physical Society (APS)
    Publication Date: 1995
    detail.hit.zdb_id: 2844160-6
    detail.hit.zdb_id: 209770-9
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  • 8
    Online Resource
    Online Resource
    Radiation effects on n -channel polycrystalline silicon thin-film transistors
    AIP Publishing ; 1995
    In:  Applied Physics Letters Vol. 67, No. 23 ( 1995-12-04), p. 3477-3479
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 67, No. 23 ( 1995-12-04), p. 3477-3479
    Abstract: The radiation effect on the n-channel polycrystalline silicon (polysilicon) thin-film transistors has been investigated. It is found that for an unhydrogenated device, the irradiation of Co60 with a total dose of 1 Mrads caused a negative threshold-voltage (Vth) shift and a slight subthreshold-swing (S) degradation, while for a hydrogenated n-channel device, the same irradiation results in a positive Vth shift and a serious S degradation. It is also found that the radiation hardness of the hydrogenated devices can be improved somewhat by a simple irradiation-then-hydrogenation treatment.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.115252
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 9
    Online Resource
    Online Resource
    Suppression of Boron Penetration in PMOS by Using Oxide Gettering Effect in Poly-Si Gate
    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. 2S ( 1995-02-01), p. 752-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 752-
    Abstract: A new stacked poly-Si gate structure with a thin ( ∼20 Å) oxide inserted in-between for p-channel metal-oxide semiconductor feild effect transistor (pMOSFET) application is proposed and demonstrated. Due to the gettering fluorine effect of this thin oxide for BF 2 + -implanted poly-Si gate, the amount of fluorine in the gate oxide, consequently, the boron penetration enhanced by fluorine are reduced. The thicker or the more apart from the gate oxide of this gettering fluorine oxide is, the more effectively it can suppress the boron penetration. Moreover, this new structure improves more the electrical characteristics than the conventional and the stacked layer poly silicon gate structures.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.34.752
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 10
    Online Resource
    Online Resource
    A Novel Shallow Trench Isolation Technique
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 3S ( 1997-03-01), p. 1319-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1319-
    Abstract: Shallow-trench isolation processes which involve refilling using deposition of oxide and polysilicon were investigated. Our results show that the oxide-filled shallow-trench isolation technology based on chemical-mechanical polishing (CMP) is difficult to control and results in poor uniformity. Use of this technology also involves in the dishing effect in wide field regions. However, shallow-trench isolation technology using a masking nitride layer, polysilicon refill, the CMP process with high etch selectivity, and local oxidation of polysilicon is easily implemented and absolutely field oxide encroachment (bird's beak) free. Although the CMP process results in the dishing effect in wide field regions, the local oxidation of polysilicon can reduce the amount of dishing. The polysilicon-filled shallow-trench isolation process can also achieve excellent uniformity across 6-inch diameter silicon wafers due to the high etching selectivity of polysilicon to chemical-vapor-deposited (CVD) oxide and SiN. Moreover, the n + /p junction leakage current of polysilicon-filled shallow trenches is comparable to that of oxide-filled shallow trenches. This simple and easily controllable process is a very promising candidate for shallow trench isolation.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.36.1319
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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