In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 5R ( 1999-05-01), p. 2707-
Abstract:
A 1.55 µm vertical cavity surface emitting laser (VCSEL) structure was grown by low pressure metalorganic chemical vapor deposition method. In-situ laser reflectometry with a wavelength near resonant position of VCSEL structure was employed to monitor the optical thickness over the whole growth time. The distributed Bragg reflectors (DBR's) were grown with alternate In 0.53 Al 0.13 Ga 0.34 As and In 0.52 Al 0.48 As quarter lambda wavelength layers. The growth time of each layer in the DBR was determined through real time feedback of growth monitoring in the growth of In 0.52 Al 0.48 As and In 0.53 Al 0.13 Ga 0.34 As buffer layers prior to beginning the subsequently grown DBR structure. The oscillatory reflection signals by the laser operating at 1.53 µm gave information for the position of stop band in the reflectivity spectrum of the VCSEL structure. The reflectivity spectrum of VCSEL structure showed excellent square-shaped flat band wider than 50 nm where the reflectivity reached a plateau as expected by the in-situ monitoring data.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.2707
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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