In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 14, No. 4 ( 1999-04), p. 1255-1260
Abstract:
(200)-oriented Pt thin films were deposited on SiO 2 /Si substrates by dc magnetron sputtering using Ar/O 2 gas mixtures. Oxygen incorporation into Pt films changed deposition rate, resistivity, stress, and preferred orientation of the films. Increase in film resistivity and decrease in tensile stress were presumed to be the results of the incorporated oxygen into grain boundaries, while the change of preferred orientation resulted from the oxygen incorporation into the Pt lattice. The preferential growth of (200) planes with less total strain energy from the incorporated oxygen resulted in strong (200) preferred orientation in Pt films.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.1999.0171
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1999
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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