In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 4R ( 1997-04-01), p. 2096-
Abstract:
The characteristics of removal of trace heavy metal contamination on the silicon surface resulted from CHF 3 / C 2 F 6 reactive ion etching (RIE) was studied using total reflection X-ray fluorescence spectroscopy (TRXRF). In order to investigate the depth profile of metallic contaminants near the surface, TRXRF measurements containing glancing angle scans were performed after slightly etching of silicon surface by repeating the cleaning procedures that diluted HF (DHF) removed the oxide grown by the mixture of H 2 SO 4 and H 2 O 2 (SPM) or O 2 plasma ashing treatment. RIE and O 2 plasma ashing processes resulted in metal contamination such as Fe, Ni, Zn, etc. They were present as both of plate-type and bulk-type, and the large part of plate-type contamination was removed easily. Especially, Fe resulted from RIE was the most abundant contaminant and its concentration was ∼10 11 atoms/ cm 2 . Fe was mainly distributed within ∼2 nm from silicon surface and could be effectively reduced below ∼2×10 10 atoms/ cm 2 by etching of ∼2.5 nm depth of the silicon substrate.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.2096
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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