In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1799-
Abstract:
InGaP/GaAs heterojunction bipolar transistors (HBTs) with a sub-square-micron emitter have been fabricated using a novel self-aligned emitter etching process with low damage and good lateral and vertical controllability. HBTs with an emitter size of 0.4×1.7 µ m fabricated using this process exhibited a current gain of 44 which is comparable to that of AlGaAs/GaAs HBTs. Furthermore, the HBTs exhibited excellent microwave performance. For an HBT with an emitter size of 0.4×2.2 µ m, a cutoff frequency ( f T ) of 55 GHz and a maximum oscillation frequency ( f max ) of 100 GHz were reached at a collector current ( I C ) as low as 1.0 mA, and a peak f T of 62 GHz and a peak f max of 105 GHz were obtained at I C =2.3 mA. As far as we know, this f max is the highest reported for GaAs-based HBTs with an emitter area of less than 1 µ m 2 . This process is thus promising for fabrication of high-speed HBT ICs with low power consumption.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.1799
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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