In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 11R ( 1999-11-01), p. 6483-
Abstract:
K 3 Li 2 Nb 5 O 15 (KLN) thin films were prepared
using an rf-magnetron sputtering technique with a sintered ceramic target containing 60 mol% and 30 mol% excess K and Li, compared
with stoichiometric KLN, respectively. In this experiment the optimum sputtering conditions were an rf power of 100 W, a working pressure
of 150 mTorr, and a substrate temperature of 600°C. When KLN was grown on a Pt/Ti/SiO 2 /Si(100) substrate at a temperature of
600°C with 150 mTorr, the thin film KLN was (001)-oriented with diffraction peaks from the (311) plane. The re-vaporization of
the volatile element on the substrate was successfully suppressed by increasing the sputtering pressure. In this work 4-fold grains of KLN
thin film and the growth mechanism of 4-fold symmetric grains were both observed for the first time.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.6483
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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