In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 5R ( 1998-05-01), p. 2416-
Abstract:
Ga 14 N/Ga 15 N/Ga 14 N isotope heterostructures are used to study nitrogen self-diffusion
by secondary-ion mass spectrometry and thermally activated decomposition. After interdiffusion of Ga 14 N and Ga 15 N layers at temperatures between 770°C and
970°C the diffusion profiles are measured. The isotope heterostructures are particularly well suited for self-diffusion studies because the diffusion takes place at the interface inside
the GaN crystal, and therefore the analysis is free from perturbations such as surface electric fields, mechanical stress or chemical potential gradients. The temperature
dependence of the nitrogen self-diffusion coefficient ( D ) in hexagonal GaN was determined
to be 1600 cm -2 s -1 exp [(-4.1±0.4) eV/ k B T ], leading to a self-diffusion entropy S SD of about 10 k B . The nitrogen flux through an isotope interface is compared with the nitrogen loss from a free GaN surface in vacuum above the decomposition temperature,
to obtain information about the diffusion kinetics relevant for epitaxial growth and high temperature device applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.2416
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink