In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 7R ( 1995-07-01), p. 3647-
Abstract:
Highly (100)-oriented thin films of Pb[(Mg 1/3 Nb 2/3 ) 0.675 Ti 0.325 ]O 3 (PMNT) were fabricated by sol-gel method on (100)-textured LaNiO 3 (LNO) metallic oxide electrode. The textured LaNiO 3 layer was prepared by rf magnetron sputtering at 250° C on Si, SiO 2 /Si or Pt/Ti/SiO 2 /Si substrates. A well orientation match was found between the PMNT and LNO layers. The annealing temperature for obtaining a pure perovskite PMNT film was reduced for about 50° C by using the LNO-coated substrates comparing to that without. A well-developed grain structure was also formed for the former. Satisfactory dielectric and ferroelectric characteristics were observed from the (100)-oriented PMNT thin films prepared at 700° C on LNO, as compared to the randomly oriented one on Pt electrode. However, an increase of annealing temperature would cause a more serious out-diffusion of LNO which gradually deteriorated the property of PMNT films deposited on LNO.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.3647
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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