In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 3 ( 1998-05-01), p. 1034-1037
Abstract:
Polished germanium Ge (100) was irradiated with 1.0–2.0 MeV Si+ at different doses from 4×1013 to 1×1014 ions/cm2 under different angles: 7°, 45°, and 60°. The radiation damage is studied by the Rutherford backscattering/channeling technique. The experimental damage distribution is extracted from the spectrum based on the procedure by Feldman et al. The experimental damage distributions are compared with the result from the TRIM (transport of ions in matter) code. The results show that (1) it is easier to amorphize Ge than Si, and the damage in Ge (100) induced by MeV Si+ depends on the dose, energy, irradiation angle, and annealing temperature also; (2) the shape of damage profile in Ge (100) induced by 2.0 MeV Si+ under 60° irradiation can be described well by the TRIM prediction, except the near-surface region where the experimental damage ratio is higher than that given by the TRIM prediction; (3) after 800 °C annealing, damaged Ge (100) trends to be recrystallized.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1998
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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