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  • American Vacuum Society  (7)
  • 1995-1999  (7)
  • Physics  (7)
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  • American Vacuum Society  (7)
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  • 1995-1999  (7)
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  • Physics  (7)
RVK
  • 1
    Online Resource
    Online Resource
    Investigation of Pt/Ta diffusion barrier using hybrid conductive oxide (RuO2) for high dielectric applications
    American Vacuum Society ; 1998
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 16, No. 3 ( 1998-05-01), p. 1137-1141
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 3 ( 1998-05-01), p. 1137-1141
    Abstract: The Pt/Ta diffusion barrier using hybrid conductive oxide (RuO2) for dynamic random access memory and ferroelectric random access memory capacitor bottom electrodes is proposed. The thermal stability of Pt+RuO2 (50 nm)/Ta+RuO2 (50 nm)/TiSi2/poly-Si/SiO2/Si contact system is investigated and compared to that of the Pt(50 nm)/Ta(50 nm)/TiSi2/poly-Si/SiO2/Si contact system. The Pt+RuO2/Ta+RuO2/TiSi2/poly-Si/SiO2/Si contact system sustained its structure up to 650 °C, whereas Pt/Ta/TiSi2/poly-Si/SiO2/Si contact system was completely degraded after annealing at 650 °C. In the former case, the addition of ruthenium dioxide (RuO2) into the Pt bottom electrode layer led to retardation of the oxygen indiffusion, preventing the indiffusion of oxygen up to 650 °C. In addition, the Ta+RuO2 diffusion barrier showed an amorphous structure and RuO2 is bound to the Ta matrix, inhibiting the interdiffusion of O, Pt, and Si through grain boundaries which can act as fast diffusion paths up to high temperatures. Therefore, it appeared that the barrier properties of Pt/Ta diffusion barrier are improved by using hybrid conductive oxide (RuO2).
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590022
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1998
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating
    American Vacuum Society ; 1999
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 17, No. 2 ( 1999-03-01), p. 731-733
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 17, No. 2 ( 1999-03-01), p. 731-733
    Abstract: Silicon field emitters have been coated with nitrogenated amorphous carbon (a-C:N) in order to enhance the electron emission current. The coating was produced using a helical resonator plasma enhanced chemical vapor deposition system. The a-C:N film is amorphous and hydrogenated with about 30 at % hydrogen. Nitrogen is also included in the amorphous network and reduces the work function by doping. a-C:N coating enhances significantly the emission current of silicon tips.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590629
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1999
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 3
    Online Resource
    Online Resource
    Barrier properties of Ta–RuO2 diffusion barrier for dynamic random access memory capacitor bottom electrodes
    American Vacuum Society ; 1999
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 17, No. 4 ( 1999-07-01), p. 1470-1476
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 17, No. 4 ( 1999-07-01), p. 1470-1476
    Abstract: We proposed the Ta–RuO2 diffusion barrier for oxygen in the dynamic random access memory capacitor bottom electrode, and investigated the barrier and electrical properties of the developed diffusion barrier. The Ta–RuO2/TiSi2/poly-Si/SiO2/Si contact system deposited with and without the SiO2 capping layer showed the lower total resistance and ohmic characteristics up to 800 °C. For the Ta–RuO2/TiSi2/poly-Si/SiO2/Si contact system, no other phases observed except for the formation of conductive RuO2 phase in the barrier film by reaction with the indiffused oxygen after annealing in air, but the thin oxidized layer at the Ta–RuO2/TiSi2 interface was formed by external oxygen. However, a large number of the crystallites in the annealed samples compared to that of as-deposited film were observed even after depth profile. The crystallites consisted of Ru and O containing a small amount of Ta. In addition, the embedded RuO2 crystalline phase was observed in the thin oxidized TiSi2 surface layer. Correspondingly, we suggest that the ohmic mechanism of the Ta–RuO2/TiSi2/poly-Si/SiO2/Si contact system is an embedded RuO2 crystalline phase involving a small amount of Ta in a Ta amorphous structure.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590776
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1999
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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  • 4
    Online Resource
    Online Resource
    Investigation of Ta–RuO2 diffusion barrier for high density memory capacitor applications
    American Vacuum Society ; 1998
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 16, No. 6 ( 1998-11-01), p. 3059-3064
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 6 ( 1998-11-01), p. 3059-3064
    Abstract: The properties of both oxygen indiffusion and oxidation resistance in a Ta+RuO2 layer for high density memory devices were investigated by using Rutherford backscattering spectroscopy, four point probe, x-ray diffraction, x-ray photoelectron spectroscopy, and planar transmission electron microscopy. The Ta+RuO2/Si system sustained up to 800 °C without an increase in resistivity. The Ta+RuO2 diffusion barrier showed a Ta amorphous microstructure and an embedded RuOx nanocrystalline structure in the as-deposited state. The Ta+RuO2 film showed the formation of RuO2 phase by reaction with the indiffused oxygen from atmosphere after annealing in an air ambient. The Ta+RuO2 diffusion barrier showed that Ta is sufficiently bound to oxygen in the as-deposited state, but RuO2 consists of Ru and Ru–O binding state. The Ta–O bonds showed little change compared to the as-deposited state with increasing annealing temperature, whereas Ru–O bonds significantly increased and transformed to conductive oxide, RuO2. Therefore, the Ta layer deposited by RuO2 addition effectively prevented the indiffusion of oxygen up to 800 °C and its oxidation resistance was superior to various barriers reported by others.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590342
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1998
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 5
    Online Resource
    Online Resource
    Ex situ formation of oxide-interlayer-mediated-epitaxial CoSi2 film using Ti capping
    American Vacuum Society ; 1999
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 17, No. 1 ( 1999-01-01), p. 162-165
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 17, No. 1 ( 1999-01-01), p. 162-165
    Abstract: A modified oxide mediated epitaxy process using a single deposition and ex situ annealing by Ti capping has been developed in this study. With pure Co on Shiraki oxide, the reaction between Co and Si did not occur even at 800 °C during ex situ annealing, because of the adsorption of oxygen on the Co film. However, when the pure Co on the Shiraki oxide was capped by Ti, a uniform Ti oxide surface layer was formed during the initial stage of annealing, which had a role to eliminate the adsorption of oxygen on the Co film. It led to uniform Co diffusion into the Si substrate through the Shiraki oxide, resulting in epitaxial CoSi2. A good channeling χmin value of 18% comparable to that of the Ti/Co bilayer system was measured in the epitaxial CoSi2 formed from this modified oxide mediated epitaxy process.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590530
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1999
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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  • 6
    Online Resource
    Online Resource
    Microcrystalline oxide-incorporated new diffusion barrier for dynamic random access memory and ferroelectric random access memory capacitor electrode
    American Vacuum Society ; 1997
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 15, No. 5 ( 1997-09-01), p. 2781-2786
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 15, No. 5 ( 1997-09-01), p. 2781-2786
    Abstract: Microcrystalline oxide-incorporated new diffusion barrier for dynamic random access memory (DRAM) and ferroelectric random access memory (FRAM) capacitor electrodes is proposed. The thermal stability of the Pt/Ta+CeO2/TiSi2/poly-Si/SiO2/Si contact system is investigated and is compared to that of the Pt/Ta/TiSi2/poly-Si/SiO2/Sicontact system. The Pt/Ta+CeO2/TiSi2/poly-Si/SiO2/Si contact system retained its structures up to 800 °C without increase in electrical resistivity but the Pt/Ta/TiSi2/poly-Si/SiO2/Si contact system was completely degraded after annealing at 650 °C. In the former case, since the addition of cerium dioxide (CeO2) led to the stuffing of microcrystalline oxide along the grain boundaries in Ta matrix and CeO2 was much heavier atomic weight than any stuffed elements, it prevented the interdiffusion of O, Pt, and Si through grain boundaries which can act as fast diffusion paths to high temperatures. It appears that the barrier properties of the microcrystalline oxide-incorporated new diffusion barrier are superior to polycrystalline transition metal barriers, polycrystalline nitride barriers, ternary amorphous compound barriers, and N2- and O2-stuffed barriers.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.580823
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1997
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 7
    Online Resource
    Online Resource
    Role of cerium dioxide in a tantalum diffusion barrier film for a Cu/Ta+CeO2/Si structure
    American Vacuum Society ; 1999
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 17, No. 1 ( 1999-01-01), p. 174-181
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 17, No. 1 ( 1999-01-01), p. 174-181
    Abstract: The effects of CeO2 addition on the barrier properties of a Ta diffusion barrier were investigated by using four point probe, optical microscopy, Auger electron microscopy, x-ray diffraction spectroscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy. The amorphous microstructure of the Ta+CeO2 diffusion barrier was up to high temperatures and the thermal stability of the Ta+CeO2/Si interface was higher than that of Ta/Si interface. The Cu/Ta+CeO2/Si system retained its structure up to 800 °C without any increase in resistivity, whereas the Cu/Ta/Si structure degraded after annealing at 550 °C. The cerium dioxide (CeO2) in the Ta layer plays a role in amorphizing the microstructure of the Ta+CeO2 barrier film and strongly binds the Ta–Ce–O system during deposition of the Ta layer. It appeared that the thermal stability of Cu/Ta+CeO2 interface as well as that of the Ta+CeO2/Si interface was much higher than that of both the Cu/Ta and the Ta/Si interfaces. Therefore, the Ta film prepared with the addition of CeO2 effectively prevented the interdiffusion of Cu and Si through the diffusion barrier up to 800 °C.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590532
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1999
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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