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  • American Institute of Physics (AIP)  (2)
  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth of InGaAs on InP using rare-earth-treated melts (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7094-7103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality In0.53Ga0.47As epilayers have been grown on semi-insulating (100) Fe-doped InP substrates. The growths were performed by liquid phase epitaxy (LPE) using rare-earth-doped melts in a graphite boat. The rare-earth elements studied were Yb, Gd and Er which act as gettering agents of impurities. Hall measurements show an elevated electron mobility for rare-earth-treated samples over undoped samples, μe=11 470 cm2/V s at 300 K and reduced carrier concentration (n-type), 9.33×1013 cm−3. The Hall results indicate an improvement in layer quality, but suggests that the treated layers are compensated. Photoluminescence (PL) studies show that the layers grown from rare-earth-doped melts have higher integrated PL efficiency with narrower PL linewidths than the undoped melt growths. The grown materials were fully characterized by Fourier transform infrared spectroscopy, double-crystal x-ray diffraction, energy dispersive spectroscopy, secondary-ion-mass spectroscopy, and deep level transient spectroscopy (DLTS). Compositional measurements reveal no measurable incorporation of rare-earth elements into the grown epilayers. DLTS measurements indicate the creation of two deep levels with rare-earth treatment, which is attributed to either the rare earth elements or impurities from within the rare-earth elements. Subsequent glow discharge mass spectrometry measurements reveal many impurities within the rare-earth elements which preferentially might lead to p-type doping centers and/or deep levels. Thus, rare-earth doping of LPE melts clearly improves epitaxial layer quality, however, the purity of commercially available rare-earth elements hinders optimal results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363721
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  • 2
    Electronic Resource
    Electronic Resource
    Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3471-3473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height was measured for five different materials on undoped In0.52Al0.48As grown by molecular beam epitaxy (MBE). Of the materials tested, two were transparent conductors, indium-tin-oxide (ITO), and cadmium tin oxide (CTO) and for comparison, three were opaque metals (Au, Ti, and Pt). The barrier heights were measured using I–V measurements. Due to the high series resistance created by the undoped In0.52Al0.48As, the Norde method [J. Appl. Phys. 50, 5052 (1979)] was used to plot the I–V characteristics and extract the Schottky barrier height. The Schottky barrier heights were determined to be 0.639, 0.637, 0.688, 0.640, and 0.623 eV for ITO, CTO, Au, Ti, and Pt, respectively. Previously published results for Schottky barriers on In0.52Al0.48As are compared with our measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113767
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