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  • American Institute of Physics (AIP)  (26)
  • 1995-1999  (26)
  • 1
    Electronic Resource
    Electronic Resource
    Sheath criterion and boundary conditions for an electrostatic sheath (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 804-807 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of collisionality of ions on the formation of a positive sheath is investigated using a two-fluid model. It is the definition of the sheath edge that determines the sheath criterion. Bohm's sheath criterion is based on the collisionless sheath and a quasineutral presheath. When collisions of ions in the sheath or finite space charge of presheath are taken into account, a sheath criterion can also be obtained based on the boundary conditions chosen at the sheath edge. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872768
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  • 2
    Electronic Resource
    Electronic Resource
    Multifaceted asymmetric radiation from the edge: A strong condensation phenomenon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 4507-4512 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Profile effects of the radiation, temperature, and the effect of atomic processes on thermal condensation instability in the tokamak edge are considered. The most important influence comes from a strong condensation effect due to the atomic processes and particle transport. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871588
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  • 3
    Electronic Resource
    Electronic Resource
    The magnetron "threshold voltage" revisited (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 463-468 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In view of the revival of interest in high-power magnetrons, an important magnetron parameter called the threshold voltage has been rederived for both relativistic and nonrelativistic cases using a novel and simplified approach. The main purpose of the paper is to investigate the physical significance of the threshold voltage and to show that, contrary to a long established opinion, no restriction on the amplitude of oscillations is required. In fact, the name itself is a misnomer, since in practice the threshold voltage is an approximate dc anode voltage at which the tube operates when delivering full power. It is this feature which, in our opinion, makes the threshold voltage so important and useful in practice. A set of numerical computations confirms our analysis and also reveals a form of Lorenz's "butterfly effect" associated with the perceived start of oscillations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872105
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  • 4
    Electronic Resource
    Electronic Resource
    Compensation defects in annealed undoped liquid encapsulated Czochralski InP (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 951-955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As-grown undoped n-type semiconducting and annealed undoped semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction SI InP can frequently be obtained by annealing undoped LEC InP. This is caused by a high concentration of thermally induced native acceptor defects. In some cases, it can be shown that the thermally induced n-type SI property of undoped LEC InP is caused by a midgap donor compensating for the net shallow acceptors. The midgap donor is proposed to be a phosphorus antisite related defect. Traps in annealed SI InP have been detected by photocurrent spectroscopy and have been compared with reported results. The mechanisms of defect formation are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370830
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  • 5
    Electronic Resource
    Electronic Resource
    Structural transformations of Bi2CuO4 induced by mechanical deformation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3155-3158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural transformation of α-Bi2CuO4 (a=8.4996 Å, c=5.8172 Å, space group P4/ncc) during ball milling was investigated by powder x-ray diffraction and thermal analysis. It is shown that α-Bi2CuO4 first transforms into an amorphous phase; and then transforms into a new phase (designated by β-Bi2CuO4) with milling time. The new phase appears to be isostructural to (La,Sr)2CuO4 and has a tetragonal cell with cell parameters a=3.869 and c=13.83 Å. It is a metastable phase which can transform back into α-Bi2CuO4 at 650 °C. No superconductivity was observed above 5 K for both as-milled samples and oxygen-annealed β-Bi2CuO4. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369692
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  • 6
    Electronic Resource
    Electronic Resource
    Optical study on the size effects in BaTiO3 thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1392-1395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study the size effects in ferroelectric thin film, we measured the optical transmittance and Raman spectra in BaTiO3 thin films deposited by the rf-magnetron sputtering technique on fused quartz and (111) Si substrates. A variation in the energy gap and Raman peaks with film thickness and grain size was observed and the possible origin was analyzed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363875
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  • 7
    Electronic Resource
    Electronic Resource
    Bulk anisotropic magnet of Sm2Fe17 type produced from the carbide by gas-solid reaction after sintering (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6559-6560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk anisotropic magnets with the composition of Sm2(Fe,M)17CxNy (M=metal) have been produced by conventional powder sintering of the carbide, followed by gas-solid reaction. The results show that this is a very promising technique for producing high-performance bulk anisotropic magnets based on intercalated rare-earth–iron compounds. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363646
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  • 8
    Electronic Resource
    Electronic Resource
    Hall-effect study of an ion-bombarded polymer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4202-4204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an extended Hall-effect study of ion-bombarded poly(benzimididazobenzophenanthroline ladder), which resembles a disordered metal. We have investigated the dependence of carrier concentration and mobility on ion energy and sample temperature during bombardment and on measurement temperature. The dramatic increases in mobility and conductivity with bombardment energy and temperature indicate increased cross-link density. Concomitant slight decreases in carrier concentration may result from fewer defects in the cross-linked network. The mobility decreases slightly with measurement temperature while the conductivity is dominated by the gradually increasing carrier density. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363295
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  • 9
    Electronic Resource
    Electronic Resource
    Light scattering in p-type GaAs:Ge (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2388-2395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present in this work the results of a Raman spectroscopy study on the plasmon–phonon coupling in Ge-doped p-type gallium arsenide. A series of polarized Raman scattering experiments were carried out on epitaxial films grown by liquid-phase epitaxy on (100) GaAs substrates at 20, 100, and 300 K. The films were p type with free hole densities varying in the range of 5×1017–1×1020 cm−3. Under the scattering configurations employed, the longitudinal optical (LO) mode is forbidden for crossed polarization while the transverse optical (TO) mode is forbidden for both parallel and crossed polarizations. However, all the polarized Raman spectra showed two peaks with frequencies close to the TO and LO phonons of semi-insulating GaAs. The appearance of such forbidden modes was accounted for with a theoretical model which considers phonon–plasmon coupled modes with wave vectors much larger than those given by the regular q≈0 wave vector transferred by photons. Ionized acceptor impurities provide such additional wave vector transfer through elastic scattering of the photoexcited electrons and holes. It is demonstrated that the experimental values for position and linewidth of the peaks are well described by the theoretical calculations when Fröhlich-type and deformation potential mechanisms are considered as means of interaction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363074
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  • 10
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of selectively delta-doped strained InxGa1−xAs/GaAs quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2627-2632 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here an investigation of selectively delta-doped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by self-consistently solving the Schrödinger and Poisson equations and the calculations revealed a systematic variation of the band structure as the delta sheet moved away from the center of the well to the edge and finally to the barrier. The results were found to be in agreement with our photoluminescence (PL) measurements. For center-doped samples, band-gap renormalization was found to be strong from the PL data, and our realistic random-phase approximation calculation for the heavily doped sample is in excellent agreement with the PL data. The radiative lifetimes were measured to be around 450 ps for all the samples, and surprisingly they vary very little from sample to sample although the wave-function overlap was considerably different for some samples. We also report Shubnikov–de Haas (SdH) measurements on the two barrier doped cases. For the heavily doped sample (A12132), two oscillation signals were detected and they were identified as two upper subbands. The measured electron densities were in very good agreement with the self-consistent calculation. Illumination did not make any difference to the measured densities. For the low-doped sample (A12025), however, the measured electron density before illumination is much smaller than the calculated, and illumination was found to make a large difference. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361133
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