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  • American Institute of Physics (AIP)  (7)
  • International Union of Crystallography (IUCr)  (1)
  • PANGAEA
  • 1995-1999  (8)
Document type
Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    High precision soft x-ray reflectometer : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2248-2250 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: At the radiometry laboratory of the Physikalisch-Technische Bundesanstalt (PTB) a reflectometer for the soft x-ray spectral region has been operated for several years utilizing monochromatic radiation of a toroidal grating monochromator or a high-resolution plane grating monochromator. The monochromators cover the photon energy region from 35 to 1500 eV. New challenges due to the development of soft x-ray optical components led to the design of a second reflectometer with advanced capabilities. Samples with a diameter of up to 250 mm can be accommodated. The time required for sample exchange is reduced by using a lock chamber. The feasibility of sample positioning with high precision has been improved. Typical uncertainties of about 1%–2%, e.g., for the reflectance of multilayer mirrors, can be achieved. A detailed description of the reflectometer as well as some typical results showing the performance are presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145720
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  • 2
    Electronic Resource
    Electronic Resource
    The soft x-ray transmission properties of thin polyimide windows and their application to future detectors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2570-2573 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The x-ray transmission properties of a very thin polyimide window in the range 7–310 A(ring) have been investigated. The window is nominally 0.24 μm thick and is supported by a hexagonal polyimide grid. Transmission of over 60% and 80% at the oxygen Kα and carbon Kα lines, respectively, have been achieved. The use of such windows as the entrance window of a gas scintillation counter (GSPC) operating as a broadband spectrometer at XUV wavelengths is discussed. Overall detector efficiencies of greater than 10% for wavelengths less than 150 A(ring) are possible to achieve. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145659
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication and properties of intrinsic Josephson junctions in thin films of Tl-Ba-Ca-Cu-O (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3396-3400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed intrinsic Josephson effects for current flow perpendicular to the CuO2 planes in HTSC thin films. Tl-Ba-Ca-Cu-O thin films were deposited on step edges in LaAlO3 substrates. Due to the special preparation process, microbridges across such steps act as stacks of intrinsic Josephson junctions with current flow perpendicular to the CuO2 planes (STEP STACK junctions). Up to 130 individual junctions could be observed exhibiting high IcRN products up to 26 mV per junction. We observed ac-Josephson effects as Shapiro steps and in microwave emission experiments. At low temperatures sharp emission peaks were detected at frequencies of 11.3 and 24.2 GHz. Broad emission peaks from the whole stack were observed at temperatures close to Tc. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363205
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  • 4
    Electronic Resource
    Electronic Resource
    Schottky-barrier fluctuations in Pb1−xSnxSe infrared sensors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7138-7143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Pb1−xSnxSe layers have been grown on Si substrates, and Schottky-barrier infrared sensors were fabricated in the layers using Pb blocking contacts. The observed current–voltage characteristics (saturation currents j0 and ideality factors n) as a function of temperature are quantitatively explained with a fluctuation model of the barrier heights [J. H. Werner, W. Güttler, J. Appl. Phys. 69, 1991 (1522)]. The amount of the mean barrier fluctuation σ, which is typically 10–30 meV, depends on the layer quality and fabrication procedure. Higher σ causes higher j0 with increasing saturation values at low temperatures. In addition, the fluctuations cause high n(〉2) values at low temperatures. Layers with improved structural quality (higher mobilities and lower threading dislocation densities) lead to lower barrier fluctuations and, therefore, to increased sensitivities. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363735
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  • 5
    Electronic Resource
    Electronic Resource
    Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1911-1916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of PbSe on (111)- and (100)-oriented Si substrates without an intermediate buffer layer is studied. It is found that on Si(111) the orientation of the IV-VI layer can by varied from (100) at 200 °C to (111) at 400 °C substrate temperature. On Si(100), only (100)-oriented layers were obtained for the whole temperature range. (100)-oriented layers with thicknesses above 0.5 μm were cracked due to thermally induced mechanical strain on cooldown to room temperature. This strain cannot be relaxed by dislocation glide in the first glide systems as it is the case for (111)-oriented layers. The structural quality of (100)-oriented PbSe layers on Si(100) and Si(111) is inferior compared to layers grown with an intermediate BaF2/CaF2 or CaF2 buffer layer. This implies that the covalent/ionic PbSe/Si interface seems to impede high-quality epitaxy, contrary to the well known ionic/ionic IV-VI/IIa-fluoride interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361076
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  • 6
    Electronic Resource
    Electronic Resource
    Current carrying capability of multifilamentary (BiPb)2Sr2Ca2Cu3Ox tapes determined from transport and magnetization measurements (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3287-3289 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic field dependence of the critical current IC(B) and the remanent magnetization of several multifilamentary (BiPb)2Sr2Ca2Cu3Ox tapes were measured. The low field behavior of IC(B) is interpreted by the self-field effect, whereas at higher fields, the field dependence for all tapes was found to be identical except for a constant factor. Although self-field transport critical current densities jC0 differed widely for the tapes, the intergranular critical current densities determined from remanent magnetization were found to be equal. The results indicate that the reduction of jC0 by macroscopic defects is an important factor, whereas locally the filaments are of high quality. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120314
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  • 7
    Electronic Resource
    Electronic Resource
    Wide bandwidth (100) GaAs/fluorides quarter-wavelength Bragg reflectors grown by molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3474-3476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Broadband quarter-wavelength Bragg reflectors that consist of periodic stacks of fluorides (CaF2–BaF2–CaF2) and GaAs, centered at 1.4 μm, were grown by molecular beam epitaxy. Despite a total fluoride thickness as high as 720 nm, crack-free surface morphology was obtained. In this letter, we report a crack-free standard quarter-wavelength III–V semiconductor-fluoride Bragg reflector. With only three stacks, the bandwidth with reflectance above 95% is about 650 nm (1.15–1.80 μm), while, near the center wavelength, the reflectivity is as high as 99%. Both important wavelengths of 1.3 and 1.55 μm for optical communication are included in the very wide high reflectance plateau. These mirrors are expected to have wide applications for optical and optoelectronic devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117256
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  • 8
    Electronic Resource
    Electronic Resource
    Components for the X-ray radiometry beamline at BESSY II (1998)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 788-790 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Optical components for the X-ray radiometry beamline of the Physikalisch-Technische Bundesanstalt at BESSY II were investigated at BESSY I. Reflectometry measurements on different mirror coatings were used to calculate their capability to suppress higher-order radiation. An MgF2 coating proved to be best suited for photon energies below 4 keV. The reflectance of silicon (111) monochromator crystals at low photon energies around 2 keV was homogeneous within ±1%. In a test at a superconducting wavelength shifter the cooling system for the first crystal was shown to cope with the absorbed power of 14 W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049597014787
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