Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 1706-1708
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new transparent conducting oxide (TCO), which can be expressed as Ga3−xIn5+xSn2O16; 0.2≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3–In2O3–SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm−1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118676
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