In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 45, No. 2 ( 1996), p. 274-
Abstract:
The quantum confined stark effect of InGaAs/InAlAs MQW heterostructures lattice-matched to InP substrate, grown by Chinese-built molecular beam epitaxy (MBE) system, is observed by absorption photocurrent spectra measurements, as well as the anisotropic elec-troabsorption of MQWs. The structure parameters of the epitaxied materials, which can be used to fabricate waveguide MQW electroabsorption modulators, were determined from double crystal X-ray diffraction measurements and computer simulations. The theoretical calculations of absorption-edge red shift compared with experimental results shows that the built-in-potential of the p-i-n junction can not be neglected.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1996
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