In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 48, No. 3 ( 1999), p. 556-
Abstract:
We have studied deep levels in AlGaInP emitter of AlGaInP/GaAs heterojunction bipolar transistor by deep-level transient spectroscopy and photoluminescence (PL) methods.Two deep levels were obtained with thermal activation energies of Ec-Et1=0.42eV and Ec-Et2=0.59eV,whose capture cross sections are 6.27×10-17cm2 and 6.49×10-20 cm2,where Et1 and Et2 are Si-related and O-related deep levels,respectively. The relationship between excitation power and PL peak intensity have revealed that nonradiative recombination centers of deep levels exist in AlGaInP.The current gain of AlGaInP/GaAs HBT decreases due to the existence of deep levels in AlGaInP.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1999
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