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  • AIP Publishing  (5)
  • 1995-1999  (5)
  • 1
    Online Resource
    Online Resource
    Modeling of microwave magnetic envelope solitons in thin ferrite films through the nonlinear Schrödinger equation
    AIP Publishing ; 1998
    In:  Journal of Applied Physics Vol. 84, No. 7 ( 1998-10-01), p. 3776-3785
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 84, No. 7 ( 1998-10-01), p. 3776-3785
    Abstract: A theoretical analysis of microwave magnetic envelope soliton profiles and the soliton peak power response for high power magnetostatic wave (MSW) excitations in yttrium iron garnet (YIG) thin films has been made. This analysis was based on the standard nonlinear Schrödinger equation with all key parameters based on experiment. The measurements were done for magnetostatic backward volume waves in a 10.2 μm YIG film, with a band edge at 5.06–5.07 GHz and operating point frequencies from 4.80 to 5.00 GHz. The use of accurate dispersion and group velocity parameters and the transmitted power versus frequency response of the MSW signal was critical. It was possible to accurately model both the shapes of the soliton pulses and the peak output versus peak input power response over a wide range of power levels.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.368556
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
    Online Resource
    Online Resource
    Dielectric tensor characterization and evaluation of several magneto-optical recording media
    AIP Publishing ; 1995
    In:  Journal of Applied Physics Vol. 78, No. 6 ( 1995-09-15), p. 4076-4090
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 78, No. 6 ( 1995-09-15), p. 4076-4090
    Abstract: We attempt to establish a dielectric tensor database for magneto-optical (MO) thin film materials with potential application for blue recording. For this purpose a method is developed for measuring the dielectric tensor of the MO layer within a multilayered stack. It uses a combination of ellipsometric, reflection/transmission, and polar MO Kerr effect measurements, and employs the MULTILAYER computer program to analyze the data. Using this approach we have measured the dielectric tensor for thin films of BiDy3(FeGa)5O12 garnet, MnBi, multilayered Co/Pt, amorphous TbFeCoTa, and fcc cobalt in the wavelength range of 400–780 nm. The dielectric tensor for the Heusler alloy films of PtMnSb, which is available from the published literature, is also presented for the sake of completeness. These materials are then evaluated based on the intrinsic MO figure of merit defined by FOM≡‖εxy‖/(2 Im εxx), where εxx and εxy are the diagonal and off-diagonal elements of the dielectric tensor of the MO material. In the blue–green regime of 400–550 nm, the relationship of the derived FOMs is as follows: FOMMnBi(≊0.027–0.045) ≊ FOMGarnet (≊0.023–0.032) ≳ FOMPtMnSb(≊0.015–0.026) ≳ FOMCo/Pt(≊0.013–0.015) ≊ FOMCo(fcc) (≊0.011–0.016) ≳ FOMTbFeCoTa (≊0.009–0.011).
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.359865
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    Surface relief associated with martensite and bainite in a Cu–Zn–Al alloy measured by atomic force microscopy
    AIP Publishing ; 1996
    In:  Journal of Applied Physics Vol. 79, No. 12 ( 1996-06-15), p. 9129-9133
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 79, No. 12 ( 1996-06-15), p. 9129-9133
    Abstract: Atomic force microscopy was employed to quantitatively study the surface relief accompanying martensite and bainite in a Cu–Zn–Al alloy. It is demonstrated that the surface relief angle associated with martensite is 14.3°, in good agreement with the theoretical result deduced from the phenomenal theory of martensite crystallography (PTMC). However, the surface relief angle associated with bainite is 2.0°–3.2°, which disagrees with the PTMC result. This indicates that the transformation mechanism of bainite is different from that of martensite. The fine structures of the surface relief associated with martensite and bainite are also investigated. The surface relief of martensite is composed of the small parallel relief caused by small martensite plates, and that of bainite is composed of small cells induced by subunits in bainite.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.362583
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 4
    Online Resource
    Online Resource
    Effects of Ga substitution on structure and magnetocrystalline anisotropy of Tm2Fe17
    AIP Publishing ; 1998
    In:  Journal of Applied Physics Vol. 83, No. 11 ( 1998-06-01), p. 5945-5954
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 83, No. 11 ( 1998-06-01), p. 5945-5954
    Abstract: A detailed investigation of the structure and magnetic properties of Tm2Fe17−xGax (x=0, 1, 2, 3, 4, 5, 6, 7, and 8) compounds has been performed by means of x-ray-diffraction, neutron-diffraction, magnetization, and ac-susceptibility measurements. Crystal-structure studies have shown that the prepared samples are single phase with the hexagonal Th2Ni17 for x⩽3 and the rhombohedral Th2Zn17 structure for x⩾5. In Tm2Fe13Ga4 the Th2Zn17 structure coexists with the Th2Ni17 structure. Substitution of Ga for Fe in Tm2Fe17 leads to an increase of the unit-cell volume, which is linear with the Ga concentration. In Tm2Fe17−xGax, the saturation magnetization at 1.5 K decreases linearly with increasing Ga content with a rate of 2.3 μB per substituted Ga atom. The Curie temperature is found first to increase with increasing Ga content, going through a maximum value of 485 K at about x=3, then to decrease. Between x=6 and 7, a minimum value of TC is reached and for higher x values TC increases again. X-ray-diffraction measurements on magnetically aligned Tm2Fe17−xGax powders show that the compounds with x⩽6 have an easy-plane type of magnetic anisotropy, whereas the compounds with x⩾7 exhibit easy c-axis anisotropy at room temperature. All Tm2Fe17−xGax compounds exhibit a spin-reorientation transition at low temperature, except for the sample with x=6, which shows an easy-magnetization direction perpendicular to the c axis in the temperature range from 5 to 300 K. For x⩽5, the spin-reorientation temperature is found first to increase with x and then to decrease, having a maximum value of 211 K at about x=3. In the samples with x⩾7, an easy-plane anisotropy was observed at low temperature, but an easy-axis preference of the magnetization at room temperature was observed. The results obtained for Tm2Fe17−xGax indicate that the mutually competing Tm- and Fe-sublattice anisotropies both change their sign with increasing Ga concentration.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.367990
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
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    Online Resource
  • 5
    Online Resource
    Online Resource
    Synthesis and magnetic properties of iron nitride films deposited on Ge(100) by reactive ion beam sputtering
    AIP Publishing ; 1997
    In:  Journal of Applied Physics Vol. 82, No. 10 ( 1997-11-15), p. 5154-5158
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 82, No. 10 ( 1997-11-15), p. 5154-5158
    Abstract: Iron nitride films were deposited on Ge(100) wafers by a reactive ion beam sputter deposition of iron in an ammonia atmosphere. The composition and microstructure of these films were monitored by Rutherford backscattering spectroscopy analyses and x-ray diffraction experiments. The magnetic properties of these films were determined by a vibrating sample magnetometer. It was found that Ge(100) substrate is profitable for epitaxial growth of the α′′ phase. The optimum ammonia pressure for α′/α′′ phase formation was about 5×10−4 Torr. The saturation magnetization σs of each as-deposited Fe–N film is higher than that of a pure iron film. However, the film with the highest α′/α′′ phase content did not exhibit the largest σs value. The variation of σs of the Fe–N films during annealing at a temperature of 180 °C in a flowing nitrogen atmosphere was also investigated. It was found that there is no direct relationship between the higher σs values and the α′/α′′ phase in these Fe–N films.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.366319
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
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