In:
Journal of Applied Physics, AIP Publishing, Vol. 83, No. 11 ( 1998-06-01), p. 5787-5791
Abstract:
We report the Si-doping-induced relaxation of residual stress in GaN epitaxial layers grown on (0001) sapphire substrate by the metalorganic vapor phase epitaxy technique. Micro-Raman spectroscopy is used to assess stress situation in the films with systematically modulated doping concentration from 4.0×1017 up to 1.6×1019 cm−3. As the Si-doping concentration increases, a monotonic decrease of the E2 phonon frequency is observed, which signifies gradual relaxation of the stress in the film. The layers are fully relaxed when electron concentration exceeds 1.6×1019 cm−3. The linear coefficient of shift in Raman frequency (ω) induced by the in-plane biaxial compressive stress (σ∥) is estimated to be Δω/Δσ∥=7.7 cm−1/GPa. We suggest that Si doping increases density of misfit dislocation, judging from linewidth of x-ray rocking curve.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1998
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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