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  • AIP Publishing  (4)
  • 1995-1999  (4)
  • 1
    Online Resource
    Online Resource
    A point-focusing small angle x-ray scattering camera using a doubly curved monochromator of a W/Si multilayer
    AIP Publishing ; 1996
    In:  Review of Scientific Instruments Vol. 67, No. 3 ( 1996-03-01), p. 688-692
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 67, No. 3 ( 1996-03-01), p. 688-692
    Abstract: A point-focusing small angle x-ray scattering (SAXS) camera using a doubly curved monochromator of a W/Si multilayer has been designed, constructed, and tested. The two radii of curvature of the monochromator are 20 400 and 7.6 mm. The reflectivity of its first-order Bragg reflection for CuKα radiation was calculated to be 0.82, being comparable to that (0.81) of its total reflection. By only 10 s x-ray exposure, scattering from a high-density polyethylene film was detected on an imaging plate (IP). A rotating-anode x-ray generator operated at 40 kV and 30 mA was used. Diffraction from rat-tail collagen has shown that the optical arrangement gives the Bragg spacing up to, at least, 30 nm for CuKα radiation. Combined with IPs, the camera may permit us to carry out time-resolved SAXS measurements for phase behaviors of liquid crystals, lipids, polymer alloys, etc., on conventional x-ray generators available in laboratories.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.1146841
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 2
    Online Resource
    Online Resource
    Electrical properties of (Zr,Sn)TiO4 dielectric thin film prepared by pulsed laser deposition
    AIP Publishing ; 1996
    In:  Journal of Applied Physics Vol. 80, No. 1 ( 1996-07-01), p. 388-392
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 80, No. 1 ( 1996-07-01), p. 388-392
    Abstract: We have been successful in obtaining temperature-stable crystallized thin film of (Zr,Sn)TiO4. Preferential (111)-oriented (Zr,Sn)TiO4 thin film was prepared by pulsed laser deposition. Effects of crystallization were elucidated based on a comparison of electric properties of crystallized and amorphous (Zr,Sn)TiO4 film. For crystallized film, the temperature coefficient of capacitance (TCC) was 20 ppm/°C at 3 MHz and the dielectric constant εr=38 in the microwave range of 1–10 GHz. These values are superior to those for amorphous film (TCC=220 ppm/°C, εr=27). The crystallization of this material was found quite effective for improving dielectrical properties. Atomic force microscope images showed the surface morphologies of crystallized and amorphous film of (Zr,Sn)TiO4 to differ.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.362795
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    Ge nanocrystals in SiO2 films
    AIP Publishing ; 1997
    In:  Applied Physics Letters Vol. 71, No. 9 ( 1997-09-01), p. 1195-1197
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 71, No. 9 ( 1997-09-01), p. 1195-1197
    Abstract: SiO 2 /Ge nanocrystal/SiO2 structures have been fabricated by deposition of Ge film on a SiO2 layer and subsequent oxidation of the structure at a temperature between 800 °C and 1000 °C. Secondary ion mass spectrometry results indicate that the Ge precipitates into the bulk SiO2 at a density of 1×1012 cm−2. Raman spectra show a sharp peak at 300 cm−1 for the nanocrystallized Ge. The nanocrystal diameter is determined to be 5 nm on average. In the metal–insulator–silicon structure, electron storage occurs in the SiO2/Ge/SiO2 potential well via electron tunneling into the oxide film. Capacitance-voltage measurements indicate that flatband voltage (VFB) shifts to 0.91 V after the electron injection. The VFB shift is attributed to the charge storing for a single electron per potential well.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.119623
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Role of xenon additive in microwave plasma-assisted (H2+CH4) chemical vapor deposition of diamond thin film
    AIP Publishing ; 1998
    In:  Journal of Applied Physics Vol. 84, No. 11 ( 1998-12-01), p. 6059-6063
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 84, No. 11 ( 1998-12-01), p. 6059-6063
    Abstract: We have examined in detail the role of the Xe additive in microwave plasma-assisted {CH4+H2} chemical vapor deposition (CVD) of diamond film. Effects of Xe addition were evident in the increased growth rate (about 50% increase for 1% Xe), without degradation of the crystallinity, and in the morphological change from the cubic to platelet grain structures. Based on the results of measuring the plasma emission spectra, Raman shift, and microwave plasma impedance, the favorable effects of Xe addition were attributed to its low dissociation and excitation energies (8.28 eV for Xe radicals), which are sufficient for the formation of CH3 but not CH2 radicals. Namely, the addition of Xe caused the CVD plasma to have higher density and lower temperature. This resulted in a large amount of atomic hydrogen and CH3 (precursors for diamond crystallization) and also a smaller amount of CH2, leading to the growth of a good-quality diamond film with a high deposition rate.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.368916
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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