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  • AIP Publishing  (7)
  • 1995-1999  (7)
Materialart
Verlag/Herausgeber
  • AIP Publishing  (7)
Person/Organisation
Sprache
Erscheinungszeitraum
  • 1995-1999  (7)
Jahr
Fachgebiete(RVK)
  • 1
    Online-Ressource
    Online-Ressource
    Pulsed anodic etching: An effective method of preparing light-emitting porous silicon
    AIP Publishing ; 1996
    In:  Applied Physics Letters Vol. 68, No. 17 ( 1996-04-22), p. 2323-2325
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 68, No. 17 ( 1996-04-22), p. 2323-2325
    Kurzfassung: A pulsed anodic etching method is developed to prepare light-emitting porous silicon. Under the same equivalent etching condition, pulsed etching can yield a more uniform porous silicon film with stronger photoluminescence intensity than the film prepared by ordinary dc etching. The atomic force microscopic observation shows that the porous silicon surface prepared by pulsed etching contains more widely separated Si columns but with steeper sidewalls, which are believed to result in the improvement of quantum confinement. The thickness of pulse etched porous silicon film is found to be much larger than that of a dc etched sample.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.115845
    RVK:
    UA 1000
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1996
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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    Online-Ressource
  • 2
    Online-Ressource
    Online-Ressource
    AuGePt ohmic contact to n -type InP
    AIP Publishing ; 1996
    In:  Journal of Applied Physics Vol. 79, No. 12 ( 1996-06-15), p. 9200-9205
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 79, No. 12 ( 1996-06-15), p. 9200-9205
    Kurzfassung: This work studied the AuGe to n-InP/ohmic contact system with the addition of Pt. It studied two contact schemes, i.e., Au/Ge/Pt/n-InP and Au/Pt/Au/Ge/n-InP. The specific contact resistances, the thermal stability, as well as the microstructure of the system, were systematically studied with the aid of scanning electron microscopy, Auger electron spectroscopy, Rutherford backscattering analysis, and x-ray diffraction. The processing condition to achieve the optimum contact resistance was also sought and it was found that a specific contact resistance of 2.15×10−6 Ω cm2 could be obtained if the Au/Ge/Pt/n-InP contact system was rapid thermal annealed at 550 °C for 30 s. The system was also found to be able to achieve low specific contact resistances for a wide range of anneal temperature from 400 to 550 °C. It was found that the Pt existence in-between AuGe and InP improved the surface morphology, the contact interface uniformity, and the thermal stability. The system could withstand a thermal aging at 400 °C for 80 h with only a minimal increase on the specific contact resistance.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.362592
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1996
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Standort Signatur Einschränkungen Verfügbarkeit
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    Online-Ressource
  • 3
    Online-Ressource
    Online-Ressource
    Spectral comparison of the gerade Rydberg states of Br2 with different angular momenta
    AIP Publishing ; 1995
    In:  The Journal of Chemical Physics Vol. 102, No. 5 ( 1995-02-01), p. 2286-2287
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 102, No. 5 ( 1995-02-01), p. 2286-2287
    Kurzfassung: Rotational structure of [2Π3/2]6s:2g Rydberg state of bromine has been studied by high resolution resonance enhanced (2+1) multiphoton ionization spectroscopy and computational simulation. Excellent agreement between theoretical analysis and experimental results was achieved. Spectral difference for two-photon transitions to Rydberg states of [2Π3/2] 6s:2g and [2Π3/2]4d:1g with different angular momenta Ω is discussed.
    Materialart: Online-Ressource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.468750
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1995
    ZDB Id: 3113-6
    ZDB Id: 1473050-9
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    Online-Ressource
    Online-Ressource
    A double metal structure Pt/Al/ n -InP diode
    AIP Publishing ; 1995
    In:  Journal of Applied Physics Vol. 78, No. 1 ( 1995-07-01), p. 291-294
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 78, No. 1 ( 1995-07-01), p. 291-294
    Kurzfassung: A high performance double metal structure, Pt/Al/n-InP diode is discussed. The diode exhibits an effective barrier height of 0.74 eV, forward characteristics with an ideality factor n=1.11 over five decades, and a reverse leakage current of 1.34×10−4 A/cm2 at −3 V. A detailed study of the electrical characteristics and secondary ion mass spectroscopy analysis of the sample suggest that the high barrier height is due to formation of an interfacial layer at the contact interface. The diode exhibits good thermal stability, maintaining a barrier height of 0.70 eV after annealing at 300 °C for 10 h.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.360673
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1995
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Standort Signatur Einschränkungen Verfügbarkeit
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    Online-Ressource
  • 5
    Online-Ressource
    Online-Ressource
    PtGe ohmic contact to n -type InP
    AIP Publishing ; 1995
    In:  Journal of Applied Physics Vol. 78, No. 10 ( 1995-11-15), p. 6108-6112
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 78, No. 10 ( 1995-11-15), p. 6108-6112
    Kurzfassung: A new ohmic contact system, Ge/Pt/Ge/Pt/n-InP, was studied systematically by measuring its specific contact resistance and by using Auger electron spectroscopy, x-ray-diffraction analysis, Rutherford backscattering spectroscopy, and scanning electron microscopy. It was found that the system has a wide temperature range for annealing, i.e., 450–550 °C, to achieve the specific contact resistance of the order of 1.0×10−5 Ω cm2. It can achieve a low specific contact resistance of 7.71×10−6 Ω cm2 when it is subjected to rapid thermal annealing at 500 °C for 30 s. The whole process is a solid phase reaction so that a smooth surface morphology is obtained. The ohmicity is due to the heavy doping of Ge in the regrown InP film. The contact system exhibits good thermal stability, being able to maintain a low specific contact resistance of 9.15×10−6 Ω cm2 for 20 h, 400 °C aging, and 2.77×10−5 Ω cm2 for 80 h aging.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.360552
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1995
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Standort Signatur Einschränkungen Verfügbarkeit
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    Online-Ressource
  • 6
    Online-Ressource
    Online-Ressource
    Radiation effects on n -channel polycrystalline silicon thin-film transistors
    AIP Publishing ; 1995
    In:  Applied Physics Letters Vol. 67, No. 23 ( 1995-12-04), p. 3477-3479
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 67, No. 23 ( 1995-12-04), p. 3477-3479
    Kurzfassung: The radiation effect on the n-channel polycrystalline silicon (polysilicon) thin-film transistors has been investigated. It is found that for an unhydrogenated device, the irradiation of Co60 with a total dose of 1 Mrads caused a negative threshold-voltage (Vth) shift and a slight subthreshold-swing (S) degradation, while for a hydrogenated n-channel device, the same irradiation results in a positive Vth shift and a serious S degradation. It is also found that the radiation hardness of the hydrogenated devices can be improved somewhat by a simple irradiation-then-hydrogenation treatment.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.115252
    RVK:
    UA 1000
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1995
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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    Online-Ressource
  • 7
    Online-Ressource
    Online-Ressource
    Thickness effect on hydrogen plasma treatment on polycrystalline silicon thin films
    AIP Publishing ; 1995
    In:  Applied Physics Letters Vol. 66, No. 22 ( 1995-05-29), p. 3013-3014
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 66, No. 22 ( 1995-05-29), p. 3013-3014
    Kurzfassung: This letter studies the hydrogen plasma effects on the resistivity, effective free carrier concentration, and mobility of As+- and BF+2-doped polycrystalline silicon (polysilicon) thin films of various thicknesses. It is found that the resistivity increases while the effective free carrier concentration decreases after the plasma treatment as the thickness of the polysilicon film decreases. The mobility typically tends to decrease for the thicker (≳60 nm) polysilicon film, but to increase for the thinner ( & lt;60 nm) polysilicon film.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.114261
    RVK:
    UA 1000
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1995
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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    Online-Ressource
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