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  • AIP Publishing  (258)
  • 1995-1999  (258)
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  • AIP Publishing  (258)
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  • 1995-1999  (258)
Year
Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    Observation of folded acoustic phonons in a porous silicon superlattice
    AIP Publishing ; 1996
    In:  Applied Physics Letters Vol. 68, No. 5 ( 1996-01-29), p. 611-612
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 68, No. 5 ( 1996-01-29), p. 611-612
    Abstract: Porous silicon superlattice was fabricated and its Raman spectra were examined. The clear zone-folded doublets from longitudinal acoustic phonons were obtained up to fourth order. A similar phenomenon was not observed in ordinary porous silicon. Using the elastic continuum model, we calculated the frequencies of these folded doublets and the obtained results were in excellent agreement with the experimental ones.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.116484
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Raman spectroscopic studies of proton-exchanged LiNbO3 crystals
    AIP Publishing ; 1995
    In:  Journal of Applied Physics Vol. 78, No. 3 ( 1995-08-01), p. 1953-1957
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 78, No. 3 ( 1995-08-01), p. 1953-1957
    Abstract: Raman spectra of LiNbO3 crystals with different proton-exchange time were examined. E(TO) and A1(TO) modes appear in the A1- and E-symmetry spectra, respectively, and their intensities show a dependence on exchange time. We attribute these results to both the internal strains resulting from order-disorder distribution of protons in the sample and the enhanced photorefractive effect. In addition, in the E-symmetry spectra the softening of A1(TO) mode at 630 cm−1 was found about 4%. The phenomenon arises from the existence of ferroelectric and paraelectric phases in the protonated sample at room temperature.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.360166
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Mo/SiO 2 multilayers for soft x-ray optical applications
    AIP Publishing ; 1999
    In:  Journal of Applied Physics Vol. 85, No. 6 ( 1999-03-15), p. 3175-3179
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 85, No. 6 ( 1999-03-15), p. 3175-3179
    Abstract: The optimal reflectivity of soft-x-ray multilayers made of new pairs of materials was theoretically calculated in the wavelength range of 2.0–4.5 nm. Molybdenum and silicon dioxide were then selected for “high index” and “low index” layer, respectively, in the multilayer system. The microstructures and composition profiles of multilayers of molybdenum and silicon dioxide were investigated by means of low-angle x-ray diffraction, cross-sectional high resolution electron microscopy, an energy-filtering transmission electron microscope elemental mapping, and Auger electron spectrometry. The results show that no diffusion of Si into Mo layers has occurred, and only slight diffusion of O into Mo layers are seen. Sharp and relatively smooth interfaces have formed. With increasing number of layers, the interfacial roughness was propagated through the multilayer stack and low-frequency roughness increases while the high-frequency roughness decreases.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.369657
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Raman scattering of porous structure formed on C+-implanted silicon
    AIP Publishing ; 1996
    In:  Applied Physics Letters Vol. 68, No. 15 ( 1996-04-08), p. 2091-2093
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 68, No. 15 ( 1996-04-08), p. 2091-2093
    Abstract: Raman spectra of the porous structure with intense blue emission formed on C+-implanted silicon were examined using a 488 nm line of Ar+ laser. A Raman peak with full width at half-maximum of 37 cm−1 was obtained at about 492 cm−1. No Raman signals related to the β-SiC were detected. The experimental result indicates that the porous structure mainly consists of Si nanometer crystallites. The existence of β-SiC precipitates with nanometer sizes may be beneficial to the reduction of crystallite sizes and strengthen the Si skeleton, which will lead to an increase in the energy band gap of Si to the blue light emission. Using a model of phonon confinement, the obtained Raman spectra could be fitted on the basis of Si quantum crystallites and the average crystallite size was estimated to be 1.4 nm.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.115594
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    Magnetic anisotropy and interlayer exchange coupling in the sputtered Co/Ag multilayers
    AIP Publishing ; 1995
    In:  Journal of Applied Physics Vol. 78, No. 9 ( 1995-11-01), p. 5549-5553
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 78, No. 9 ( 1995-11-01), p. 5549-5553
    Abstract: The in-plane uniaxial anisotropy and perpendicular anisotropy of sputtered Co/Ag(111) multilayers have been investigated by magnetic measurements and the in-plane ferromagnetic resonance (FMR) technique. The data-fitting analysis for the FMR experimental results about the angular dependence of the resonance field shows that the in-plane anisotropy cannot be fully described by only using the first-order term, and the second-order term must be included. Furthermore, the interface-induced anisotropy has been obtained by FMR. Both ferromagnetic and antiferromagnetic couplings have been revealed by hysteresis loop measurement. Specifically, a spin-flip phase transition has been observed in the sputtered Co/Ag(111) multilayers, which is attributed to the effects of the AF-coupling and in-plane uniaxial anisotropy.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.359675
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 6
    Online Resource
    Online Resource
    Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
    AIP Publishing ; 1999
    In:  Applied Physics Letters Vol. 74, No. 14 ( 1999-04-05), p. 1996-1998
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 74, No. 14 ( 1999-04-05), p. 1996-1998
    Abstract: A new high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic heterostructure field-effect transistor, based on a novel airbridge-gate structure with multiple piers, has been fabricated successfully. Due to the employment of high Schottky barrier GaInP layer and the newly designed double delta-doped sheets (D3S) InGaAs channel, the high gate-to-drain breakdown voltage and broad and linear transconductance are obtained simultaneously. Moreover, the use of airbridge-gate technique not only suppresses the parasitic capacitance, but also exhibits a wide and flat operation regime of the current gain cutoff frequency fT and maximum oscillation frequency fmax.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.123725
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 7
    Online Resource
    Online Resource
    Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing
    AIP Publishing ; 1997
    In:  Applied Physics Letters Vol. 70, No. 26 ( 1997-06-30), p. 3573-3575
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 70, No. 26 ( 1997-06-30), p. 3573-3575
    Abstract: The effect of laser annealing on important detector characteristics such as dark current, spectral response, and absolute responsivity is investigated for bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetectors (QWIPs) operating in the 8–12 μm wavelength regime. A set of experiments was conducted on QWIPs fabricated from both as-grown and laser-annealed multiple-quantum-well structures. Compared to the as-grown structure, the peak spectral response of the laser-annealed structure was shifted to longer wavelengths, though absolute responsivity was decreased by about a factor of two. In addition, over a wide range of bias levels, the laser-annealed QWIPs exhibited a slightly lower dark current compared to the as-grown QWIPs. Thus, the postgrowth control of GaAs/AlGaAs quantum-well composition profiles by laser annealing offers unique opportunities to fine tune various aspects of a QWIP’s response.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.119237
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 8
    Online Resource
    Online Resource
    Reduction of the frequency chirp of two section distributed feedback laser by nonuniform current injection
    AIP Publishing ; 1995
    In:  Applied Physics Letters Vol. 66, No. 16 ( 1995-04-17), p. 2028-2030
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 66, No. 16 ( 1995-04-17), p. 2028-2030
    Abstract: The effect of nonuniform current injection on the frequency chirp of a two section distributed feedback (DFB) laser, which is under large signal modulation, is measured while the optical intensity and optical modulation depth are fixed. By adjusting the injection current distribution in the laser, the frequency chirp can be reduced since the effects of carrier density fluctuations in the two sections on the chirp partially compensate each other. The range of the injection current ratio of the two sections is found in which the chirp is at its minimum. The reduction of the frequency chirp is predicted by a computer simulation for two section DFB lasers which accounts for the longitudinal spatial hole burning.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.113681
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 9
    Online Resource
    Online Resource
    Complementary group resolution of the SU(n) outer multiplicity problem. I. The Littlewood rules and a complementary U(2n−2) group structure
    AIP Publishing ; 1998
    In:  Journal of Mathematical Physics Vol. 39, No. 10 ( 1998-10-01), p. 5631-5641
    Details
    In: Journal of Mathematical Physics, AIP Publishing, Vol. 39, No. 10 ( 1998-10-01), p. 5631-5641
    Abstract: A complementary group to SU(n) is found that realizes all features of the Littlewood rules for Kronecker products of SU(n) representations. This is accomplished by considering a state of SU(n) to be a special Gel’fand state of the complementary group U(2n−2) with labels of the latter used to distinguish multiple occurrences of irreducible representations of SU(n) (irreps) in the SU(n)×SU(n)↓SU(n) decomposition that is obtained from the Littlewood rules. Furthermore, this realization also helps us to determine SU(n)⊃SU(n−1)×U(1) Reduced Wigner Coefficients (RWCs, frequently called Isoscalar Factors) and Clebsch–Gordan Coefficients [CGCs, or full (nonreduced) Wigner Coefficients] of SU(n), using algebraic or numeric methods, in either the canonical or a noncanonical basis. New explicit formulas for the SU(3) and SU(4) multiplicities are obtain ed by using this technique.
    Type of Medium: Online Resource
    ISSN: 0022-2488 , 1089-7658
    URL: Article
    DOI: 10.1063/1.532555
    RVK:
    UA 4660
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 1472481-9
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  • 10
    Online Resource
    Online Resource
    Phonon properties and microstructure of annealed LiTaO3:Nd
    AIP Publishing ; 1997
    In:  Applied Physics Letters Vol. 70, No. 18 ( 1997-05-05), p. 2401-2403
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 70, No. 18 ( 1997-05-05), p. 2401-2403
    Abstract: Phonon properties and microstructure of annealed Nd-doped LiTaO3 (LT:Nd) were examined by means of Raman scattering and infrared spectra. Raman spectra show the splitting of A1(TO) mode at 204 cm−1 and the appearance of an additional shoulder peak at ∼208 cm−1, indicating that the homogeneous distribution of Nd ions leads to the structural recovery of partial oxygen octahedra centered with Li and Ta ions, but the microstructural deviation from original LT trigonal system still exists. The enhancement of E(TO) mode intensities and the reduction of A1(TO) mode intensities in the A1+E symmetry spectrum are mainly attributed to the microstructural deviation of LT:Nd and the changed photorefractive effect due to annealing. Infrared spectra in the OH stretching region suggest that the changed photorefractive effect arises from the displacements of positive ions along the optical z axis.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.118884
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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