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  • 1
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    PKDB116107 (2000)
    PANGAEA
    Details
    Publication Date: 2023-03-08
    Keywords: AGE; Age, comment; Age, maximum/old; Age, minimum/young; Evaporation; Interpretation from literature (PKDB); Latitude of event; Longitude of event; Paleoclimate Database of the Quaternary; PKDB; PKDB116107; Precipitation, relative difference; Precipitation integrated; Temperature, air; Temperature, relative difference
    Type: Dataset
    Format: text/tab-separated-values, 41 data points
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    DATA PANGAEA
  • 2
    Electronic Resource
    Electronic Resource
    Further developments in an ac-based capacitance tomography system (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3902-3907 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ac-based electrical capacitance tomography (ECT) system has been developed at UMIST, with sinusoidal excitation and phase-sensitive demodulation (PSD). In this article the overall system design is briefly described and then discussed in detail are the key design features, needed to achieve a high signal-to-noise ratio and a high data acquisition rate, including transient process analysis of the first stage, design of an analog Butterworth low-pass filter and optimization of the data acquisition process. The experiments show that the ac-based system has signal variance 19 times better than the previous design, the charge/discharge ECT system, and that a data acquisition rate of 140 frames per second is achieved for a 12-electrode system. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403012
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  • 3
    Electronic Resource
    Electronic Resource
    White microbeam diffraction from distorted crystals (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 749-751 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a general description of white-beam (Laue) scattering from grains with dislocations. This approach is applied to examples with equal numbers of positive and negative Burger's vectors (paired) and with unpaired dislocations of one sign (geometrically necessary). We find that streaking of the Laue reflections is sensitive to both long-range geometrical rotations introduced by unpaired edge dislocations and to local rotation fluctuations introduced by the total number of dislocations (paired and unpaired). We demonstrate the technique by analyzing the dislocation distribution in a nanoindented Cu single crystal. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389321
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1529-1531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the realization of wide band gap (5–6 eV), single-phase, metastable, and epitaxial MgxZn1−xO thin-film alloys grown on sapphire by pulsed laser deposition. We found that the composition, structure, and band gaps of the MgxZn1−xO thin-film alloys depend critically on the growth temperature. The structural transition from hexagonal to cubic phase has been observed for (Mg content greater than 50 at. %) (1≥x≥0.5) which can be achieved by growing the film alloys in the temperature range of 750 °C to room temperature. Interestingly, the increase of Mg content in the film has been found to be beneficial for the epitaxial growth at relatively low growth temperature in spite of a large lattice mismatch between sapphire and cubic MgZnO alloys. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456266
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of perimeters of induced shielding current loops on levitation force in melt grown single-domain YBa2Cu3O7−x bulk (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2043-2045 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of perimeters of induced shielding current loops (ISCL) on a levitation force have been investigated for a single-domain YBa2Cu3O7−x sample. The sample was prepared by a top-seeded melt–growth process. The levitation force of the sample decreases monotonously with the increasing perimeters of ISCL while the depth of the cutting slot increases along its diameter from one side to another. The maximum levitation force of the sample without any cutting slot is about 1.68 times higher than that of the sample bisected. A simple physical model is afforded to interpret the experimental results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404999
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  • 6
    Electronic Resource
    Electronic Resource
    Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2787-2789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of visible blind ultraviolet photodetectors based on MgxZn1−xO. Using pulsed laser deposition technique, Mg0.34Zn0.66O thin films with a bandgap of 4.05 eV were epitaxially grown on c-plane sapphire substrates. The structural, electrical, and optical properties of epilayers were characterized using various techniques. Based on the Mg0.34Zn0.66O films, planar geometry photconductive type metal–semiconductor–metal photodetectors were fabricated. At a 5 V bias, a high responsivity of 1200 A/W was achieved at 308 nm, and the visible rejection (R308 nm/R400 nm) was more than four orders of magnitude. The 10%–90% rise and fall time were 8 ns and 1.4 μs, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368378
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  • 7
    Electronic Resource
    Electronic Resource
    Molecular mapping of a new gene for resistance to frogeye leaf spot of soya bean in ‘Peking’ (2001)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 120 (2001), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Amplified fragment length polymorphism (AFLP) and microsatellite (simple sequence repeat, SSR) techniques were used to map the _RGSpeking gene, which is resistant to most isolates of Cercospora sojina in the soya bean cultivar ‘Peking’. The mapping was conducted using a defined F2 population derived from the cross of ‘Peking’(resistant) בLee’(susceptible). Of 64 EcoRI and MseI primer combinations, 30 produced polymorphisms between the two parents. The F2 population, consisting of 116 individuals, was screened with the 30 AFLP primer pairs and three mapped SSR markers to detect markers possibly linked to RcsPeking. One AFLP marker amplified by primer pair E-AAC/M-CTA and one SSR marker Satt244 were identified to be linked to ResPeking. The gene was located within a 2.1-cM interval between markers AACCTA178 and Satt244, 1.1 cM from Satt244 and 1.0 cM from AACCTA178. Since the SSR markers Satt244 and Satt431 have been mapped to molecular linkage group (LG) J of soya bean, the ResPeking resistance gene was putatively located on the LG J. This will provide soya bean breeders an opportunity to use these markers for marker-assisted selection for frogeye leaf spot resistance in soya bean.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1439-0523.2001.00563.x
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of indoor air quality using multiple measurements of nitrogen dioxide (2004)
    Oxford, UK : Munksgaard International Publishers
    Indoor air 14 (2004), S. 0 
    Details
    ISSN: 1600-0668
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1600-0668.2003.00216.x
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  • 9
    Electronic Resource
    Electronic Resource
    NK and NK-like T-cell lymphoma in extranasal sites: a comparative clinicopathological study according to site and EBV status (2004)
    Oxford, UK : Blackwell Science Ltd
    Histopathology 44 (2004), S. 0 
    Details
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Aims:  To analyse the clinicopathological findings of extranasal CD56+ cytotoxic T- or NK-cell lymphomas in different organs and to compare Epstein–Barr virus (EBV)+ and EBV– lymphoma of non-blastoid cytomorphology.Methods and results:  Fifty-one cases of cCD3+ T-cell intracellular antigen (TIA-1)+ CD56+ lymphomas of extranodal/extranasal origin were included in the study. The primary sites of the CD56+ tumours were soft tissue (n = 10), the gastrointestinal (GI) tract (n = 13), the skin (n = 15), upper aerodigestive tract excluding nasal and nasopharyngeal regions (n = 11), the testis (n = 1), and parotid gland (n = 1). TCR gene rearrangement was detected in seven of 47 cases examined (16%). EBV was positive in 39 of 51 cases (76%). The positive rate of EBV was higher in tumours of soft tissue (80%), GI tract (92%), and skin (80%), and lowest in the upper aerodigestive tract excluding the nasal and nasopharyngeal region (50%). Tumours of the soft tissue and the upper aerodigestive tract tended to present with localized disease (P = 0.002). The 2-year survival rate was lowest for tumours of the GI tract (P = 0.0256). EBV– TCR– lymphoma showed less necrosis (P = 0.0133) and a better 2-year survival rate (P = 0.0066) than EBV+ TCR– lymphoma. Patients with EBV+ TCR+ lymphomas tended to present with localized disease, more often than EBV+ TCR– lymphoma (P = 0.0186). Significant prognostic factors in all CD56+ lymphomas were the site (P = 0.0256), EBV status (P = 0.0026), necrosis with or without perforation (P = 0.0338) and the presence of pleomorphic large tumour cells (P = 0.0428). Cox's regression analysis adjusting for other pathological parameters showed EBV status to be the only independent prognostic factor (P = 0.018).Conclusions:  Extranodal CD56+ EBV– lymphoma at extranasal sites is a clinically less aggressive malignancy and displays less necrosis than CD56+ EBV+ lymphoma. Because CD56+ EBV+ TCR+ lymphomas show similar pathological and clinical findings to CD56+ EBV+ TCR– lymphomas, nasal-type NK/T-cell lymphomas at extranasal sites should be diagnosed as such on the basis of EBV+, cytotoxic T or NK phenotype irrespective of the genotype determined by molecular study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2559.2004.01867.x
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  • 10
    Electronic Resource
    Electronic Resource
    Microstructural Characterization of Sintered MoSi2/SiCP Composites (2000)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A MoSi2/SiCP composite was synthesized by in situ reactive sintering of a mixture of molybdenum, silicon, and carbon powders. Its microstructural features were studied by X-ray energy dispersive spectroscopy (EDS), conventional transmission electron microscopy (CTEM), and high-resolution transmission electron microscopy (HREM). It was determined that the composite was composed of α-MoSi2 and β-SiC. There were no specific orientation relationships between the MoSi2 matrix and SiCP, because the MoSi2 and SiC were formed at 1450°C by the reaction of solid Mo and C and liquid Si. The abrupt change occurring in the microstructure of the composite is explained by the presence of an interface between MoSi2 and SiCP, where no observable SiO2 amorphous layer or particles were found. Microtwins and stacking faults were frequently observed in {111} planes of SiCP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2000.tb01315.x
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